IXYN100N120B3H1 vs IXYN100N120C3H1 vs IXYN100N120C3

 
PartNumberIXYN100N120B3H1IXYN100N120C3H1IXYN100N120C3
DescriptionIGBT Transistors DISC IGBT XPT-GENX3 SOT-227UI(IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBTIGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT
ManufacturerIXYSIXYSIXYS
Product CategoryIGBT TransistorsIGBT TransistorsIGBT Transistors
RoHSYYY
TechnologySiSiSi
SeriesPlanarIXYN100N120IXYN100N120
PackagingTubeTubeTube
BrandIXYSIXYSIXYS
Product TypeIGBT TransistorsIGBT TransistorsIGBT Transistors
Factory Pack Quantity101010
SubcategoryIGBTsIGBTsIGBTs
TradenameXPT, GenX3XPT, GenX3XPT
Unit Weight1.058219 oz1.058219 oz1.058219 oz
Package / Case-SOT-227B-4SOT-227B-4
Mounting Style-SMD/SMTSMD/SMT
Configuration-SingleSingle
Collector Emitter Voltage VCEO Max-1.2 kV1200 V
Collector Emitter Saturation Voltage-2.9 V2.9 V
Maximum Gate Emitter Voltage-20 V30 V
Continuous Collector Current at 25 C-134 A152 A
Pd Power Dissipation-690 W830 W
Minimum Operating Temperature-- 55 C- 55 C
Maximum Operating Temperature-+ 150 C+ 175 C
Continuous Collector Current Ic Max-440 A152 A
Height-9.6 mm-
Length-38.23 mm-
Operating Temperature Range-- 55 C to + 150 C-
Width-25.42 mm-
Continuous Collector Current-134 A-
Gate Emitter Leakage Current-100 nA100 nA
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