IXYN100N120C3

IXYN100N120C3
Mfr. #:
IXYN100N120C3
Manufacturer:
Littelfuse
Description:
IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT
Lifecycle:
New from this manufacturer.
Datasheet:
IXYN100N120C3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXYN100N120C3 DatasheetIXYN100N120C3 Datasheet (P4-P6)IXYN100N120C3 Datasheet (P7)
ECAD Model:
More Information:
IXYN100N120C3 more Information
Product Attribute
Attribute Value
Manufacturer:
IXYS
Product Category:
IGBT Transistors
RoHS:
Y
Technology:
Si
Package / Case:
SOT-227B-4
Mounting Style:
SMD/SMT
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
1200 V
Collector-Emitter Saturation Voltage:
2.9 V
Maximum Gate Emitter Voltage:
30 V
Continuous Collector Current at 25 C:
152 A
Pd - Power Dissipation:
830 W
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Series:
IXYN100N120
Packaging:
Tube
Continuous Collector Current Ic Max:
152 A
Brand:
IXYS
Gate-Emitter Leakage Current:
100 nA
Product Type:
IGBT Transistors
Factory Pack Quantity:
10
Subcategory:
IGBTs
Tradename:
XPT
Unit Weight:
1.058219 oz
Tags
IXYN100N1, IXYN10, IXYN1, IXYN, IXY
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
GenX3™ XPT™ IGBT 1200 V 152 A Chassis Mount High-Speed IGBT - SOT-227B
***ical
Trans IGBT Module N-CH 1200V 152A 830000mW
***i-Key
IGBT MOD 1200V 152A 830W SOT227B
***trelec
Configuration = Single / Continuous Collector Current (Ic) A = 160 / Collector-Emitter Voltage (Vceo) kV = 1.2 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 3.5 / Emitter Leakage Current nA = 100 / Power Dissipation (Pd) W = 830 / Gate Emitter Voltage (Vge) V = 20 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = SOT-227B / Pins = 4 / Mounting Type = SMD / Packaging = Tube / Reflow Temperature Max. °C = 260
1200V XPT™ High Speed IGBTs
IXYS 1200V XPT™ High Speed IGBTs are high speed, high-gain 1200V Insulated Gate Bipolar Transistor products. The 1200V XPT™ High Speed IGBTs feature high current ratings (105A - 160A, Tc = 25 degrees Centigrade) and are specifically optimized for reduced switching losses in high voltage applications that require hard-switching frequencies of up to 50 kHz. IXYS's 1200V XPT™ High Speed IGBTs have high-speed switching capabilities that allow customers to boost the power conversion efficiency of their designs and to use smaller, lighter and more cost-effective passive components. The resultant effect is a reduction in total system cost of ownership for these 1200V XPT™ High Speed IGBTs and a reduced PCB layout area.Learn More
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Part # Mfg. Description Stock Price
IXYN100N120C3H1
DISTI # V99:2348_15876629
IXYS CorporationTrans IGBT Chip N-CH 1.2KV 134A 4-Pin SOT-227B
RoHS: Compliant
10
  • 200:$28.3400
  • 100:$31.2600
  • 50:$32.3900
  • 25:$34.0400
  • 10:$37.1500
  • 5:$38.5900
  • 1:$40.5100
IXYN100N120C3
DISTI # V99:2348_15876625
IXYS CorporationTrans IGBT Chip N-CH 1.2KV 152A 4-Pin SOT-227B
RoHS: Compliant
3
  • 200:$23.3900
  • 100:$25.0400
  • 50:$26.3600
  • 25:$27.1600
  • 10:$29.4500
  • 5:$30.3700
  • 1:$31.9800
IXYN100N120C3H1
DISTI # V36:1790_15876629
IXYS CorporationTrans IGBT Chip N-CH 1.2KV 134A 4-Pin SOT-227B
RoHS: Compliant
0
    IXYN100N120C3H1
    DISTI # IXYN100N120C3H1-ND
    IXYS CorporationIGBT XPT 1200V 134A SOT-227B
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    153In Stock
    • 100:$32.9648
    • 30:$35.1623
    • 10:$38.0190
    • 1:$40.6600
    IXYN100N120C3
    DISTI # IXYN100N120C3-ND
    IXYS CorporationIGBT XPT 1200V 152A SOT-227B
    RoHS: Compliant
    Min Qty: 10
    Container: Tube
    Temporarily Out of Stock
    • 10:$33.5470
    IXYN100N120C3H1
    DISTI # 33629159
    IXYS CorporationTrans IGBT Chip N-CH 1.2KV 134A 4-Pin SOT-227B
    RoHS: Compliant
    10
    • 1:$40.5100
    IXYN100N120C3
    DISTI # 29518522
    IXYS CorporationTrans IGBT Chip N-CH 1.2KV 152A 4-Pin SOT-227B
    RoHS: Compliant
    3
    • 200:$25.1442
    • 100:$26.9180
    • 50:$28.3370
    • 25:$29.1970
    • 10:$31.6588
    • 5:$32.6478
    • 1:$34.3785
    IXYN100N120C3H1
    DISTI # 02AC9854
    IXYS CorporationIGBT, N-CH, 1.2KV, 134A, SOT-227B,Transistor Polarity:N Channel,DC Collector Current:134A,Collector Emitter Saturation Voltage Vce(on):3.5V,Power Dissipation Pd:690W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case RoHS Compliant: Yes5
    • 250:$29.1800
    • 100:$33.2900
    • 50:$33.4000
    • 25:$35.5100
    • 10:$38.3900
    • 5:$39.1100
    • 1:$41.0700
    IXYN100N120C3
    DISTI # 747-IXYN100N120C3
    IXYS CorporationIGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT
    RoHS: Compliant
    82
    • 1:$34.5400
    • 5:$32.8100
    • 10:$31.9500
    • 25:$29.3600
    • 50:$28.6500
    • 100:$27.2900
    • 200:$25.0400
    IXYN100N120C3H1
    DISTI # 747-IXYN100N120C3H1
    IXYS CorporationIGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT
    RoHS: Compliant
    1075
    • 1:$40.6600
    • 5:$38.7200
    • 10:$38.0100
    • 25:$35.1600
    • 50:$33.0700
    • 100:$32.9600
    • 200:$28.8900
    IXYN100N120C3
    DISTI # 8047600
    IXYS CorporationIGBT N-CH 1200V 86A XPT GENX3 SOT227B, EA23
    • 25:£22.8200
    • 10:£23.6400
    • 5:£24.7400
    • 1:£27.4900
    IXYN100N120C3H1
    DISTI # 8047619
    IXYS CorporationIGBT 1200V 134A XPT GENX3 DIODE SOT227B, EA91
    • 30:£22.8500
    • 10:£23.3200
    • 5:£24.1700
    • 2:£25.2900
    • 1:£28.1000
    IXYN100N120C3H1
    DISTI # 2674801
    IXYS CorporationIGBT, N-CH, 1.2KV, 134A, SOT-227B
    RoHS: Compliant
    5
    • 100:$49.9400
    • 30:$53.2700
    • 10:$57.5900
    • 1:$61.5900
    IXYN100N120C3H1
    DISTI # 2674801
    IXYS CorporationIGBT, N-CH, 1.2KV, 134A, SOT-227B
    RoHS: Compliant
    5
    • 100:£23.3800
    • 50:£26.7600
    • 10:£27.9300
    • 5:£31.3300
    • 1:£32.3000
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    Availability
    Stock:
    Available
    On Order:
    5500
    Enter Quantity:
    Current price of IXYN100N120C3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $34.54
    $34.54
    5
    $32.81
    $164.05
    10
    $31.95
    $319.50
    25
    $29.36
    $734.00
    50
    $28.65
    $1 432.50
    100
    $27.29
    $2 729.00
    200
    $25.04
    $5 008.00
    500
    $23.83
    $11 915.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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