IXYN100N120C3 Datasheet IXYN100N120C3 | P1-P3

IXYN100N120C3

V

CES

= 1200V

I

C110

= 84A

V

CE(sat)







3.50V

t

fi(typ)

= 110ns

DS100405C(4/18)

High-Speed IGBT

for 20-50 kHz Switching

Features



Optimized for Low Switching Losses



Square RBSOA



Isolation Voltage 2500V~



Positive Thermal Coefficient of

Vce(sat)



Avalanche Rated



High Current Handling Capability



International Standard Package

Advantages



High Power Density



Low Gate Drive Requirement

Applications



High Frequency Power Inverters



UPS



Motor Drives



SMPS



PFC Circuits



Battery Chargers



Welding Machines



Lamp Ballasts

Symbol Test Conditions Characteristic Values

(T

J

= 25C, Unless Otherwise Specified) Min. Typ. Max.

BV

CES

I

C

= 250A, V

GE

= 0V 1200 V

V

GE(th)

I

C

= 250A, V

CE

= V

GE

3.0 5.0 V

I

CES

V

CE

= V

CES

,

V

GE

= 0V 10 A

T

J

= 150C 1.25 mA

I

GES

V

CE

= 0V, V

GE

= 20V 100 nA

V

CE(sat)

I

C

= 100A, V

GE

= 15V, Note 1 2.96 3.50 V

T

J

= 150C 3.78 V

Symbol Test Conditions Maximum Ratings

V

CES

T

J

= 25°C to 175°C 1200 V

V

CGR

T

J

= 25°C to 175°C, R

GE

= 1M 1200 V

V

GES

Continuous ±20 V

V

GEM

Transient ±30 V

I

C25

T

C

= 25°C (Chip Capability) 160 A

I

C110

T

C

= 110°C 84 A

I

CM

T

C

= 25°C, 1ms 460 A

I

A

T

C

= 25°C 50 A

E

AS

T

C

= 25°C 1.2 J

SSOA V

GE

= 15V, T

VJ

= 150°C, R

G

= 1 I

CM

= 200 A

(RBSOA) Clamped Inductive Load @V

CE

 V

CES

P

C

T

C

= 25°C 830 W

T

J

-55 ... +175 °C

T

JM

175 °C

T

stg

-55 ... +175 °C

V

ISOL

50/60Hz t = 1min 2500 V~

I

ISOL

1mA t = 1s 3000 V~

M

d

Mounting Torque 1.5/13 Nm/lb.in.

Terminal Connection Torque 1.3/11.5 Nm/lb.in.

Weight 30 g

1200V XPT

TM

IGBT

GenX3

TM

E

SOT-227B, miniBLOC

G = Gate, C = Collector, E = Emitter

 either emitter terminal can be used as

Main or Kelvin Emitter

G

E 

C

E153432

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYN100N120C3

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Notes:

1. Pulse test, t  300μs, duty cycle, d  2%.

2. Switching times & energy losses may increase for higher V

CE

(clamp), T

J

or R

G

.

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

g

fs

I

C

= 60A, V

CE

= 10V, Note 1 30 50 S

C

ie

s

4950 pF

C

oes

V

CE

= 25V, V

GE

= 0V, f = 1MHz 356 pF

C

res

120 pF

Q

g(on)

260 nC

Q

ge

I

C

= I

C110

, V

GE

= 15V, V

CE

= 0.5 • V

CES

47 nC

Q

gc

102 nC

t

d(on)

27 ns

t

ri

110 ns

E

on

12.00 mJ

t

d(off)

120 ns

t

fi

110 ns

E

of

f

4.90 mJ

t

d(on)

27 ns

t

ri

116 ns

E

on

15.00 mJ

t

d(off)

146 ns

t

fi

125 ns

E

off

6.15 mJ

R

thJC

0.18 °C/W

R

thCS

0.05 °C/W

Inductive load, T

J

= 25°C

I

C

= I

C110

, V

GE

= 15V

V

CE

= 0.5 • V

CES

, R

G

= 1

Note 2

Inductive load, T

J

= 125°C

I

C

= I

C110

, V

GE

= 15V

V

CE

= 0.5 • V

CES

, R

G

= 1

Note 2

IXYN100N120C3

Fig. 1. Output Characteristics @ T

J

= 25

o

C

0

20

40

60

80

100

120

140

160

180

200

00.511.522.533.544.555.56

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

13V

12V

11V

7V

9V

6V

8V

10V

Fig. 2. Extended Output Characteristics @ T

J

= 25

o

C

0

50

100

150

200

250

300

350

400

450

0 5 10 15 20 25 30 35

V

CE

- Volts

I

C

-

Amperes

V

GE

= 15V

12V

13V

8V

9V

10V

11V

14V

6V

7V

Fig. 3. Output Characteristics @ T

J

= 150

o

C

0

20

40

60

80

100

120

140

160

180

200

012345678

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

13V

12V

11V

10V

8V

9V

7V

5V

6V

Fig. 4. Dependence of V

CE(sat)

on

Junction Temperature

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

-50 -25 0 25 50 75 100 125 150 175

T

J

- Degrees Centigrade

V

CE(sat)

- Normalized

V

GE

= 15V

I

C

= 100A

I

C

= 50A

I

C

= 200A

Fig. 5. Collector-to-Emitter Voltage vs.

Gate-to-Emitter Voltage

2

3

4

5

6

7

8

6 7 8 9 10 11 12 13 14 15

V

GE

- Volts

V

CE

- Volts

I

C

= 200A

T

J

= 25

o

C

100A

50A

Fig. 6. Input Admittance

0

40

80

120

160

200

240

4567891011

V

GE

- Volts

I

C

-

Amperes

T

J

= 150

o

C

25

o

C

T

J

= - 40

o

C

IXYN100N120C3

IXYN100N120C3

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