Jan2N3501 vs Jan2N3501L vs Jan2N3501/TR

PartNumber	Jan2N3501	Jan2N3501L	Jan2N3501/TR
Description	Bipolar Transistors - BJT Small-Signal BJT	Bipolar Transistors - BJT Small-Signal BJT	Bipolar Transistors - BJT
Manufacturer	Microchip	Microchip	Microchip
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT	Bipolar Transistors - BJT
RoHS	N	N	N
Technology	Si	-	Si
Mounting Style	Through Hole	-	Through Hole
Transistor Polarity	NPN	-	NPN
Configuration	Single	-	Single
Collector Emitter Voltage VCEO Max	150 V	-	150 V
Collector Base Voltage VCBO	150 V	-	150 V
Emitter Base Voltage VEBO	6 V	-	6 V
Collector Emitter Saturation Voltage	200 mV	-	0.4 V
Maximum DC Collector Current	300 mA	-	300 mA
Minimum Operating Temperature	- 65 C	-	- 65 C
Maximum Operating Temperature	+ 200 C	-	+ 200 C
Packaging	Bulk	Tray	-
Brand	Microchip / Microsemi	Microchip / Microsemi	Microchip / Microsemi
Pd Power Dissipation	1 W	-	1 W
Product Type	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors
Factory Pack Quantity	1	1	1
Subcategory	Transistors	Transistors	Transistors
Package / Case	-	-	TO-39-3
DC Current Gain hFE Max	-	-	300 at 150 mA, 10 V
DC Collector/Base Gain hfe Min	-	-	20 at 300 mA, 10 V