Jan2N3501/TR

Product Attribute

Attribute Value

Manufacturer:

Microchip

Product Category:

Bipolar Transistors - BJT

RoHS:

N

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-39-3

Transistor Polarity:

NPN

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

150 V

Collector- Base Voltage VCBO:

150 V

Emitter- Base Voltage VEBO:

6 V

Collector-Emitter Saturation Voltage:

0.4 V

Maximum DC Collector Current:

300 mA

Minimum Operating Temperature:

- 65 C

Maximum Operating Temperature:

+ 200 C

DC Current Gain hFE Max:

300 at 150 mA, 10 V

Brand:

Microchip / Microsemi

DC Collector/Base Gain hfe Min:

20 at 300 mA, 10 V

Pd - Power Dissipation:

1 W

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

1

Subcategory:

Transistors

Tags

Jan2N3501, Jan2N350, Jan2N35, Jan2N3, Jan2N, Jan2, JAN