PD55003-E vs PD55003 vs PD55003L

 
PartNumberPD55003-EPD55003PD55003L
DescriptionRF MOSFET Transistors RF POWER TRANSRF MOSFET Transistors N-Ch 40 Volt 2.5 AmpRF MOSFET Transistors N-Ch 40 Volt 2.5 Amp
ManufacturerSTMicroelectronicsSTMicroelectronics
Product CategoryRF MOSFET TransistorsRF MOSFET TransistorsRF FETs
RoHSYN-
Transistor PolarityN-ChannelN-ChannelN-Channel
TechnologySiSiSi
Id Continuous Drain Current2.5 A2.5 A-
Vds Drain Source Breakdown Voltage40 V40 V-
Gain17 dB17 dB17 dB at 500 MHz
Output Power3 W3 W3 W
Minimum Operating Temperature- 65 C- 65 C- 65 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePowerSO-10RF-Formed-4PowerSO-10RF-Formed-4-
PackagingTubeTubeReel
ConfigurationSingleSingle-
Height3.5 mm3.5 mm-
Length7.5 mm7.5 mm-
Operating Frequency1 GHz1 GHz1 GHz
SeriesPD55003-EPD55003PD55003L-E
TypeRF Power MOSFETRF Power MOSFETRF Power MOSFET
Width9.4 mm9.4 mm-
BrandSTMicroelectronicsSTMicroelectronics-
Forward Transconductance Min1 S--
Channel ModeEnhancementEnhancement-
Moisture SensitiveYesYes-
Pd Power Dissipation31.7 W31.7 W-
Product TypeRF MOSFET TransistorsRF MOSFET Transistors-
Factory Pack Quantity40050-
SubcategoryMOSFETsMOSFETs-
Vgs Gate Source Voltage20 V20 V-
Unit Weight0.105822 oz0.105822 oz-
Package Case--PowerFLAT (5x5)
Pd Power Dissipation--14 W
Vgs Gate Source Voltage--15 V
Id Continuous Drain Current--2.5 A
Vds Drain Source Breakdown Voltage--40 V
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