PD55003-E

Mfr. #:: PD55003-E
Manufacturer:: STMicroelectronics
Description:: RF MOSFET Transistors RF POWER TRANS
Lifecycle:: New from this manufacturer.
Datasheet:: PD55003-E Datasheet
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More Information:: PD55003-E more Information PD55003-E Product Details

Product Attribute
Attribute Value

Manufacturer:: STMicroelectronics

Product Category:: RF MOSFET Transistors

RoHS:: Y

Transistor Polarity:: N-Channel

Technology:: Si

Id - Continuous Drain Current:: 2.5 A

Vds - Drain-Source Breakdown Voltage:: 40 V

Gain:: 17 dB

Output Power:: 3 W

Minimum Operating Temperature:: - 65 C

Maximum Operating Temperature:: + 150 C

Mounting Style:: SMD/SMT

Package / Case:: PowerSO-10RF-Formed-4

Packaging:: Tube

Configuration:: Single

Height:: 3.5 mm

Length:: 7.5 mm

Operating Frequency:: 1 GHz

Series:: PD55003-E

Type:: RF Power MOSFET

Width:: 9.4 mm

Brand:: STMicroelectronics

Forward Transconductance - Min:: 1 S

Channel Mode:: Enhancement

Moisture Sensitive:: Yes

Pd - Power Dissipation:: 31.7 W

Product Type:: RF MOSFET Transistors

Factory Pack Quantity:: 400

Subcategory:: MOSFETs

Vgs - Gate-Source Voltage:: 20 V

Unit Weight:: 0.105822 oz

Tags: PD55003, PD5500, PD550, PD55, PD5

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

PD55003-E Description

***ark: Rf Fet Transistor, 40 V, 2.5 A, 31.7 W, 1 Ghz, Powerso-10Rf Rohs Compliant: Yes

***ure Electronics: PD55003-E Series 500 MHz 3 W N-Channel RF Power Transistor - POWERSO-10RF

***p One Stop: Trans RF MOSFET N-CH 40V 2.5A 3-Pin PowerSO-10RF (Formed lead) Tube

***icroelectronics: 3W 12.5V 500MHz LDMOS in PowerSO-10RF plastic package

***roFlash: RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

***nell: MOSFET, RF, N-CH, 40V, 2.5A, POWERSO; Drain Source Voltage Vds: 40V; Continuous Drain Current Id: 2.5A; Power Dissipation Pd: 31.7W; Operating Frequency Min: -; Operating Frequency Max: 1GHz; RF Transistor Case: PowerSO-10RF;

***icroelectronics: 3W 12.5V 500MHz LDMOS in PowerSO-10RF plastic package

***ical: Trans RF MOSFET N-CH 40V 2.5A 3-Pin PowerSO-10RF (Formed lead) T/R

***icroelectronics SCT: RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs

***r Electronics: RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

***ure Electronics: RF MOSFET Transistors POWER R.F.

***ser: RF Integrated Circuits POWER R.F.

***ure Electronics: N-CHANNEL 40 V 0.045 Ohm 0.75 W Power Mosfet Surface Mount - SOT-23-3

***ical: Trans MOSFET N-CH 40V 3A 3-Pin SOT-23 T/R

***enic: 40V 3A 750mW 45m´Î@10V3.9A 3V@250Ã×A N Channel SOT-23(SOT-23-3) MOSFETs ROHS

***roFlash: Small Signal Field-Effect Transistor, 3A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

***ark: N Channel Mosfet, 40V, 3.9A, To-236, Full Reel; Transistor Polarity:n Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:3.9A; On Resistance Rds(On):0.036Ohm; Transistor Mounting:surface Mount; No. Of Pins:3Pins Rohs Compliant: No

***ment14 APAC: MOSFET,N CH,40V,3A,SOT23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:3.9A; Drain Source Voltage Vds:40V; On Resistance Rds(on):36mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:750mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Id Max:3A; Power Dissipation Pd:750mW; Voltage Vgs Max:20V

***ure Electronics: Si2318DS Series 40 V 3.9 A 45 mOhm SMT N-Channel MOSFET - SOT-23-3

***roFlash: Small Signal Field-Effect Transistor, 3A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

***ment14 APAC: N CH MOSFET; Transistor Polarity:N Chann; N CH MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:40V; On Resistance Rds(on):36mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:750mW; No. of Pins:3

***ark: Lateral N-Channel Broadband Rf Power Mosfet, 520 Mhz, 3 W, 12.5 V

***W: RF Power Transistor, 0.135 to 0.52 GHz, 3 W, Typ Gain in dB is 15 @ 520 MHz, 12.5 V, SOT1811-1, LDMOS

*** Stop Electro: RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

***ment14 APAC: MOSFET, N, RF, PLD-1.5; Transistor Type:RF MOSFET; Drain Source Voltage Vds:40V; Continuous Drain Current Id:2A; Power Dissipation Pd:31.25W; RF Transistor Case:PLD-1.5; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Gain:15dB; Output Power:3W; Package / Case:PLD-1.5; Power Dissipation Max:31.25W; Power Dissipation Pd:31.25W; Termination Type:SMD; Transistor Case Style:PLD-1.5; Transistor Polarity:N Channel; Voltage Vds:650mV

***itex: Transistor: N-MOSFET; unipolar; 30V; 2.7A; 0.1ohm; 1.3W; -55+150 deg.C; SMD; SOT23

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS

*** Source Electronics: MOSFET N-CH 30V 2.7A SOT-23-3 / Trans MOSFET N-CH 30V 2.7A 3-Pin SOT-23 T/R

***ure Electronics: Single N-Channel 30 V 154 mOhm 1 nC HEXFET® Power Mosfet - SOT-23

***trelec: MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Power dissipation: 1.3 W

***(Formerly Allied Electronics): MOSFET, 30V, 2.7A, 100 MOHM, 1.0 NC QG,SOT-23

***roFlash: Power Field-Effect Transistor, 2.7A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

***ineon: Benefits: RoHS Compliant; Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified MSL1; SOT-23 Footprint | Target Applications: Battery Protection; DC Switches; Load Switch; Load Switch High Side; Load Switch Low Side

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2.7A; On Resistance Rds(On):0.08Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V Rohs Compliant: Yes

***ment14 APAC: MOSFET, N CH, 30V, 2.7A, SOT-23; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):80mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.3W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:2.7A; Power Dissipation Pd:1.3W; Voltage Vgs Max:20V

***(Formerly Allied Electronics): IRF7309PBF Dual N/P-channel MOSFET Transistor; 3 A; 4 A; 30 V; 8-Pin SOIC

***ure Electronics: Dual N/P-Channel 30 V 0.05/0.1 Ohm 25/25 nC HEXFET® Power Mosfet - SOIC-8

***ineon SCT: 30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

***trelec: MOSFET Operating temperature: -55...150 °C Housing type: SOIC-8 Polarity: N/P Variants: Enhancement mode Power dissipation: 1.4 W

***nell: MOSFET, DUAL NP LOGIC SO-8; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 4A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.05ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Power D

***ark: Channel Type:dual N And Dual P Channel; Drain Source Voltage Vds N Channel:30V; Drain Source Voltage Vds P Channel:30V; Continuous Drain Current Id N Channel:4A; Continuous Drain Current Id P Channel:3A; No. Of Pins:8Pins Rohs Compliant: Yes

Market price

Part #	Mfg.	Description	Stock	Price
PD55003-E DISTI # V99:2348_18300543	STMicroelectronics	Trans RF MOSFET N-CH 40V 2.5A 3-Pin PowerSO-10RF (Formed lead) Tube RoHS: Compliant	81	1000:$7.6550 500:$8.2289 100:$8.9300 10:$10.3539 1:$11.1910
PD55003-E DISTI # 497-5297-5-ND	STMicroelectronics	FET RF 40V 500MHZ PWRSO10 RoHS: Compliant Min Qty: 1 Container: Tube	490In Stock	1000:$7.9534 500:$8.6710 100:$9.7474 50:$11.0630 1:$12.5600
PD55003-E DISTI # 25093464	STMicroelectronics	Trans RF MOSFET N-CH 40V 2.5A 3-Pin PowerSO-10RF (Formed lead) Tube RoHS: Compliant	257	250:$6.0475 100:$6.2179 50:$6.3981 25:$6.5891 2:$6.7918
PD55003-E DISTI # 25960771	STMicroelectronics	Trans RF MOSFET N-CH 40V 2.5A 3-Pin PowerSO-10RF (Formed lead) Tube RoHS: Compliant	81	10:$10.3539 1:$11.1910
PD55003-E DISTI # PD55003-E	STMicroelectronics	Trans MOSFET N-CH 40V 2.5A 4-Pin(2+2Tab) PowerSO-10RF (Formed lead) Tube (Alt: PD55003-E) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 4	1:€11.0600 5:€9.8800 10:€8.7100 50:€8.2000 100:€7.6800 250:€6.5100
PD55003-E DISTI # PD55003-E	STMicroelectronics	Trans MOSFET N-CH 40V 2.5A 4-Pin(2+2Tab) PowerSO-10RF (Formed lead) Tube - Bag (Alt: PD55003-E) RoHS: Compliant Min Qty: 400 Container: Bag	Americas - 486	400:$8.8900 800:$8.4900 1600:$8.0900 2400:$7.6900 4000:$7.5900
PD55003-E DISTI # 06X0639	STMicroelectronics	Trans MOSFET N-CH 40V 2.5A 4-Pin(2+2Tab) PowerSO-10RF (Formed lead) Tube - Bulk (Alt: 06X0639) RoHS: Compliant Min Qty: 1 Container: Bulk	Americas - 0	1:$12.5600 10:$11.5500 25:$11.0700 50:$10.4100 100:$9.7500 250:$9.2700
PD55003-E DISTI # 06X0639	STMicroelectronics	RF FET Transistor, 40 V, 2.5 A, 31.7 W, 1 GHz, PowerSO-10RF RoHS Compliant: Yes	170	1:$12.5600 10:$11.5500 25:$11.0700 50:$10.4100 100:$9.7500 250:$9.2700
PD55003-E DISTI # 511-PD55003-E	STMicroelectronics	RF MOSFET Transistors RF POWER TRANS RoHS: Compliant	373	1:$12.5600 10:$11.5500 25:$11.0700 100:$9.7500 250:$9.2700
PD55003TR-E DISTI # 511-PD55003TR-E	STMicroelectronics	RF MOSFET Transistors POWER R.F. RoHS: Compliant	0	1:$12.5600 10:$11.5500 25:$11.0700 100:$9.7500 250:$9.2700 600:$8.6800
PD55003-E DISTI # PD55003-E	STMicroelectronics	Transistor: N-MOSFET,unipolar,RF,40V,2.5A,31.7W,SO10RF,SMT	7	1:$14.2700 3:$12.3000 10:$9.8800 50:$8.8800
PD55003-E DISTI # PD55003-E	STMicroelectronics	RF POWER TRANSISTOR RoHS: Compliant	0	400:$8.6800 500:$8.2200 1000:$7.8000
PD55003-E DISTI # 2341739	STMicroelectronics	MOSFET, RF, N-CH, 40V, 2.5A, POWERSO RoHS: Compliant	3930	1:£11.2600 5:£9.6000 10:£8.4500 50:£7.9600 100:£7.4500
PD55003-E DISTI # 2341739	STMicroelectronics	MOSFET, RF, N-CH, 40V, 2.5A, POWERSO RoHS: Compliant	3930	1:$19.8800 10:$18.2900 25:$17.5200 100:$15.4300 250:$14.6700
PD55003-E DISTI # C1S730200315308	STMicroelectronics	Trans RF MOSFET N-CH 40V 2.5A 3-Pin PowerSO-10RF (Formed lead) Tube RoHS: Compliant	81	10:$10.3539 1:$11.1910

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PD55003-E

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes