Electrical characteristics PD55003-E
4/29 Doc ID 12273 Rev 4
2 Electrical characteristics
T
CASE
= +25
o
C
2.1 Static
2.2 Dynamic
2.3 Moisture sensitivity level
Table 4. Static
Symbol Test conditions Min Typ Max Unit
I
DSS
V
GS
= 0 V
DS
= 28 V 1 µA
I
GSS
V
GS
= 20 V V
DS
= 0 1 µA
V
GS(Q)
V
DS
= 10 V
I
D
= 50 mA 2.0 5.0 V
R
DS(ON)
V
GS
= 10 V I
D
= 1 A 0.75
g
FS
V
DS
= 10 V I
D
= 1 A 1.0 mho
C
ISS
V
GS
= 0 V
DS
= 12.5 V f = 1 MHz 36 pF
C
OSS
V
GS
= 0 V
DS
= 12.5 V f = 1 MHz 24 pF
C
RSS
V
GS
= 0 V
DS
= 12.5 V f = 1 MHz 2.4 pF
Table 5. Dynamic
Symbol Test conditions Min Typ Max Unit
P
1dB
V
DD
= 12.5 V, I
DQ
= 50 mA f = 500 MHz 3 W
G
P
V
DD
= 12.5 V, I
DQ
= 50 mA, P
OUT
= 3W, f = 500 MHz 14 17 dB
h
D
V
DD
= 12.5 V, I
DQ
= 50 mA, P
OUT
= 3W, f = 500 MHz 45 52 %
Load
mismatch
V
DD
= 15.5 V, I
DQ
= 50 mA, P
OUT
= 3W, f = 500 MHz
All phase angles
20:1 VSWR
Table 6. Moisture sensitivity level
Test methodology Rating
J-STD-020B MSL 3
PD55003-E Impedance
Doc ID 12273 Rev 4 5/29
3 Impedance
Figure 2. Current conventions
Table 7. Impedance data
PD55003-E PD55003S-E
Freq. (MHz) Z
IN
()Z
DL
() Freq. (MHz) Z
IN
()Z
DL
()
520 1.871 - j 1.118 4.779 + j 4.956 520 1.407 - j 3.550 6.557 + j 7.844
500 1.542 - j 3.705 6.842 + j 6.209 500 1.306 - j 5.159 8.351 + j 9.120
480 1.109 - j 1.783 6.789 + j 4.533 480 1.302 - j 6.141 8.994 + j 8.983
860 1.33 + j 1.23 2.93 + j 0.62
Typical Drain
Load Impedance
Typical Input
Impedance
G
Zin
Z
DL
D
S
Typical performance PD55003-E
6/29 Doc ID 12273 Rev 4
4 Typical performance
Figure 3. Capacitance vs. drain voltage Figure 4. Drain current vs. gate-source
voltage
Figure 5. Gate-source voltage vs. case
temperature
Figure 6. Maximum safe operating area
0 5 10 15 20 25 30
VDD, DRAIN VOLTAGE (V)
1
10
100
C, CAPACITANCES (pF)
Ciss
Coss
Crss
f= 1 MHz
2 2.5 3 3.5 4 4.5 5 5.5 6
VGS, GATE-SOURCE VOLTAGE (V)
0
0.5
1
1.5
2
2.5
Id, DRAIN CURRENT (A)
Vdd=10V
-25 0 25 50 75 100
Tc, CASE TEMPERATURE (°C)
0.94
0.96
0.98
1
1.02
1.04
1.06
VGS, GATE-SOURCE VOLTAGE (Normalized)
Vds= 10 V
Id= .25 A
Id= .5 A
Id= 1 A
Id= 1.5 A
Id= 2.5 A
Id= 2 A
0.1
1
10
110100
TC = 100 °C TC = 70 °C TC = 25 °C
Id, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
TJ = +165°C
AM10119V1

PD55003-E

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
RF MOSFET Transistors RF POWER TRANS
Lifecycle:
New from this manufacturer.
Delivery:
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