PD55003S-E

Mfr. #:: PD55003S-E
Manufacturer:: STMicroelectronics
Description:: RF MOSFET Transistors POWER R.F.
Lifecycle:: New from this manufacturer.
Datasheet:: PD55003S-E Datasheet
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More Information:: PD55003S-E more Information PD55003S-E Product Details

Product Attribute
Attribute Value

Manufacturer:: STMicroelectronics

Product Category:: RF MOSFET Transistors

RoHS:: Y

Transistor Polarity:: N-Channel

Technology:: Si

Id - Continuous Drain Current:: 2.5 A

Vds - Drain-Source Breakdown Voltage:: 40 V

Gain:: 17 dB

Output Power:: 3 W

Minimum Operating Temperature:: - 65 C

Maximum Operating Temperature:: + 150 C

Mounting Style:: SMD/SMT

Package / Case:: PowerSO-10RF-Straight-4

Packaging:: Tube

Configuration:: Single

Height:: 3.5 mm

Length:: 7.5 mm

Operating Frequency:: 1 GHz

Series:: PD55003-E

Type:: RF Power MOSFET

Width:: 9.4 mm

Brand:: STMicroelectronics

Channel Mode:: Enhancement

Moisture Sensitive:: Yes

Pd - Power Dissipation:: 31.7 W

Product Type:: RF MOSFET Transistors

Factory Pack Quantity:: 400

Subcategory:: MOSFETs

Vgs - Gate-Source Voltage:: 20 V

Unit Weight:: 0.105822 oz

Tags: PD55003S, PD55003, PD5500, PD550, PD55, PD5

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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PD55003S-E Description

***p One Stop Global: Trans RF MOSFET N-CH 40V 2.5A 3-Pin PowerSO-10RF (Straight lead) Tube

***icroelectronics: 3W 12.5V 500MHz LDMOS in PowerSO-10RF plastic package

***r Electronics: RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

***ark: Rf Fet Transistor, 40 V, 2.5 A, 31.7 W, 1 Ghz, Powerso-10Rf Rohs Compliant: Yes

***ure Electronics: PD55003-E Series 500 MHz 3 W N-Channel RF Power Transistor - POWERSO-10RF

***p One Stop: Trans RF MOSFET N-CH 40V 2.5A 3-Pin PowerSO-10RF (Formed lead) Tube

***icroelectronics: 3W 12.5V 500MHz LDMOS in PowerSO-10RF plastic package

***roFlash: RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

***nell: MOSFET, RF, N-CH, 40V, 2.5A, POWERSO; Drain Source Voltage Vds: 40V; Continuous Drain Current Id: 2.5A; Power Dissipation Pd: 31.7W; Operating Frequency Min: -; Operating Frequency Max: 1GHz; RF Transistor Case: PowerSO-10RF;

***icroelectronics: 3W 12.5V 500MHz LDMOS in PowerSO-10RF plastic package

***ical: Trans RF MOSFET N-CH 40V 2.5A 3-Pin PowerSO-10RF (Formed lead) T/R

***icroelectronics SCT: RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs

***r Electronics: RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

*** Stop Electro: RF Power Field-Effect Transistors

***ser: RF Integrated Circuits POWER R.F.

***ure Electronics: N-CHANNEL 40 V 0.045 Ohm 0.75 W Power Mosfet Surface Mount - SOT-23-3

***ical: Trans MOSFET N-CH 40V 3A 3-Pin SOT-23 T/R

***enic: 40V 3A 750mW 45m´Î@10V3.9A 3V@250Ã×A N Channel SOT-23(SOT-23-3) MOSFETs ROHS

***icontronic: Power Field-Effect Transistor, 3A I(D), 40V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

***ark: N Channel Mosfet, 40V, 3.9A, To-236, Full Reel; Transistor Polarity:n Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:3.9A; On Resistance Rds(On):0.036Ohm; Transistor Mounting:surface Mount; No. Of Pins:3Pins Rohs Compliant: No

***ment14 APAC: MOSFET,N CH,40V,3A,SOT23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:3.9A; Drain Source Voltage Vds:40V; On Resistance Rds(on):36mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:750mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Id Max:3A; Power Dissipation Pd:750mW; Voltage Vgs Max:20V

***ure Electronics: Si2318DS Series 40 V 3.9 A 45 mOhm SMT N-Channel MOSFET - SOT-23-3

***icontronic: Power Field-Effect Transistor, 3A I(D), 40V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

***ment14 APAC: N CH MOSFET; Transistor Polarity:N Chann; N CH MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:40V; On Resistance Rds(on):36mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:750mW; No. of Pins:3

***ark: Lateral N-Channel Broadband Rf Power Mosfet, 520 Mhz, 3 W, 12.5 V

***W: RF Power Transistor, 0.135 to 0.52 GHz, 3 W, Typ Gain in dB is 15 @ 520 MHz, 12.5 V, SOT1811-1, LDMOS

*** Stop Electro: RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

***ment14 APAC: MOSFET, N, RF, PLD-1.5; Transistor Type:RF MOSFET; Drain Source Voltage Vds:40V; Continuous Drain Current Id:2A; Power Dissipation Pd:31.25W; RF Transistor Case:PLD-1.5; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Gain:15dB; Output Power:3W; Package / Case:PLD-1.5; Power Dissipation Max:31.25W; Power Dissipation Pd:31.25W; Termination Type:SMD; Transistor Case Style:PLD-1.5; Transistor Polarity:N Channel; Voltage Vds:650mV

***Yang: Transistor: N-MOSFET, unipolar, 30V, 2.7A, 0.1ohm, 1.3W, -55+150 deg.C, SMD, SOT23

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS

*** Source Electronics: MOSFET N-CH 30V 2.7A SOT-23-3 / Trans MOSFET N-CH 30V 2.7A 3-Pin SOT-23 T/R

***ure Electronics: Single N-Channel 30 V 154 mOhm 1 nC HEXFET® Power Mosfet - SOT-23

*** Electronics: IRLML2030TRPBF Infineon MOSFET N-Ch 30V 2.7A 3-PinSOT-23 T/R RoHS

***trelec: MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Power dissipation: 1.3 W

***(Formerly Allied Electronics): MOSFET, 30V, 2.7A, 100 MOHM, 1.0 NC QG,SOT-23

***roFlash: Power Field-Effect Transistor, 2.7A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

***ineon: Benefits: RoHS Compliant; Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified MSL1; SOT-23 Footprint | Target Applications: Battery Protection; DC Switches; Load Switch; Load Switch High Side; Load Switch Low Side

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2.7A; On Resistance Rds(On):0.08Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V Rohs Compliant: Yes

***ment14 APAC: MOSFET, N CH, 30V, 2.7A, SOT-23; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):80mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.3W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:2.7A; Power Dissipation Pd:1.3W; Voltage Vgs Max:20V

Market price

Part #	Mfg.	Description	Stock	Price
PD55003S-E DISTI # V79:2366_17782215	STMicroelectronics	Trans RF MOSFET N-CH 40V 2.5A 3-Pin PowerSO-10RF (Straight lead) Tube RoHS: Compliant	2	10:$11.9949 1:$12.3890
PD55003S-E DISTI # 497-5298-5-ND	STMicroelectronics	FET RF 40V 500MHZ PWRSO10 RoHS: Compliant Min Qty: 400 Container: Tube	Temporarily Out of Stock	400:$9.2690
PD55003S-E DISTI # 26113453	STMicroelectronics	Trans RF MOSFET N-CH 40V 2.5A 3-Pin PowerSO-10RF (Straight lead) Tube RoHS: Compliant	2	1:$12.3390
PD55003S-E DISTI # PD55003S-E	STMicroelectronics	Trans MOSFET N-CH 40V 2.5A 4-Pin(2+2Tab) PowerSO-10RF (Straight lead) Tube - Bag (Alt: PD55003S-E) RoHS: Compliant Min Qty: 400 Container: Bag	Americas - 0	400:$8.8900 800:$8.4900 1600:$8.0900 2400:$7.6900 4000:$7.5900
PD55003S-E DISTI # 511-PD55003S-E	STMicroelectronics	RF MOSFET Transistors POWER R.F. RoHS: Compliant	0	1:$12.5600 10:$11.5500 25:$11.0700 100:$9.7500 250:$9.2700 500:$8.6800 1000:$7.9600
PD55003STR-E DISTI # 511-PD55003STR-E	STMicroelectronics	RF MOSFET Transistors POWER R.F. RoHS: Compliant	0
PD55003S-E DISTI # PD55003S-E	STMicroelectronics	RF POWER TRANSISTOR RoHS: Compliant	0	400:$8.6800 500:$8.2200 1000:$7.8000
PD55003S-E DISTI # C1S730200607625	STMicroelectronics	Trans RF MOSFET N-CH 40V 2.5A 3-Pin(2+Tab) PowerSO-10RF (Straight lead) Tube RoHS: Compliant	2	1:$12.0450

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	Mfr.#: L17H2110130 OMO.#: OMO-L17H2110130-AMPHENOL-ICC	D-Sub Dualport Connectors D-SUB STACKED

PD55003S-E

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes