PD55003S-E vs PD55003STR-E vs PD55003S

 
PartNumberPD55003S-EPD55003STR-EPD55003S
DescriptionRF MOSFET Transistors POWER R.F.RF MOSFET Transistors POWER R.F.FET RF 40V 500MHZ PWRSO-10
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryRF MOSFET TransistorsRF MOSFET TransistorsTransistors - FETs, MOSFETs - Single
RoHSYY-
Transistor PolarityN-ChannelN-ChannelN-Channel
TechnologySiSiSi
Id Continuous Drain Current2.5 A2.5 A-
Vds Drain Source Breakdown Voltage40 V40 V-
Gain17 dB17 dB17 dB at 500 MHz
Output Power3 W3 W3 W
Minimum Operating Temperature- 65 C- 65 C- 65 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePowerSO-10RF-Straight-4PowerSO-10RF-Straight-4-
PackagingTubeReelTube
ConfigurationSingleSingle-
Height3.5 mm3.5 mm-
Length7.5 mm7.5 mm-
Operating Frequency1 GHz1 GHz1 GHz
SeriesPD55003-EPD55003-EPD55003-E
TypeRF Power MOSFETRF Power MOSFETRF Power MOSFET
Width9.4 mm9.4 mm-
BrandSTMicroelectronicsSTMicroelectronics-
Channel ModeEnhancementEnhancement-
Moisture SensitiveYesYes-
Pd Power Dissipation31.7 W31.7 W-
Product TypeRF MOSFET TransistorsRF MOSFET Transistors-
Factory Pack Quantity400600-
SubcategoryMOSFETsMOSFETs-
Vgs Gate Source Voltage20 V20 V-
Unit Weight0.105822 oz0.105822 oz-
Package Case--PowerSO-10RF (Straight Lead)
Pd Power Dissipation--31.7 W
Vgs Gate Source Voltage--+/- 20 V
Id Continuous Drain Current--2.5 A
Vds Drain Source Breakdown Voltage--40 V
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