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| PartNumber | PSMN1R5-30BLEJ | PSMN1R5-30BLE | PSMN1R5-30BLE118 |
| Description | MOSFET N-channel 30 V 1.5 mo FET | Now Nexperia PSMN1R5-30BLE - Power Field-Effect Transistor, 120A I(D), 30V, 0.00185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
| Manufacturer | Nexperia | NXP Semiconductors | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 120 A | - | - |
| Rds On Drain Source Resistance | 1.3 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.7 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 228 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 401 W | - | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Nexperia | - | - |
| Fall Time | 99.2 ns | 99.2 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 156.1 ns | 156.1 ns | - |
| Factory Pack Quantity | 800 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 191.8 ns | 191.8 ns | - |
| Typical Turn On Delay Time | 100.6 ns | 100.6 ns | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| Series | - | - | - |
| Package Case | - | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | - |
| Operating Temperature | - | -55°C ~ 175°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | D2PAK | - |
| FET Type | - | MOSFET N-Channel, Metal Oxide | - |
| Power Max | - | 401W | - |
| Drain to Source Voltage Vdss | - | 30V | - |
| Input Capacitance Ciss Vds | - | 14934pF @ 15V | - |
| FET Feature | - | Logic Level Gate | - |
| Current Continuous Drain Id 25°C | - | 120A (Tc) | - |
| Rds On Max Id Vgs | - | 1.5 mOhm @ 25A, 10V | - |
| Vgs th Max Id | - | 2.15V @ 1mA | - |
| Gate Charge Qg Vgs | - | 228nC @ 10V | - |
| Pd Power Dissipation | - | 401 W | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 120 A | - |
| Vds Drain Source Breakdown Voltage | - | 30 V | - |
| Vgs th Gate Source Threshold Voltage | - | 1.7 V | - |
| Rds On Drain Source Resistance | - | 1.3 mOhms | - |
| Qg Gate Charge | - | 228 nC | - |