RGT50TS65DGC11 vs RGT50TS65D vs RGT50TS65DG

 
PartNumberRGT50TS65DGC11RGT50TS65DRGT50TS65DG
DescriptionIGBT Transistors 650V 25A IGBT Stop Trench
ManufacturerROHM Semiconductor--
Product CategoryIGBT Transistors--
RoHSY--
TechnologySi--
Package / CaseTO-247-3--
Mounting StyleThrough Hole--
Collector Emitter Voltage VCEO Max650 V--
Collector Emitter Saturation Voltage1.65 V--
Maximum Gate Emitter Voltage30 V--
Continuous Collector Current at 25 C48 A--
Pd Power Dissipation174 W--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 175 C--
SeriesRGT50TS65D--
PackagingTube--
Continuous Collector Current Ic Max48 A--
Operating Temperature Range- 40 C to + 175 C--
BrandROHM Semiconductor--
Continuous Collector Current25 A--
Gate Emitter Leakage Current+/- 200 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity450--
SubcategoryIGBTs--
Part # AliasesRGT50TS65D--
Unit Weight1.340411 oz--
Top