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| PartNumber | SI4816BDY-T1-E3 | SI4816BDY-T1-GE3 | SI4816BDY-T1-E3-CUT TAPE |
| Description | MOSFET 30V Vds 20V Vgs SO-8 | MOSFET 30V Vds 20V Vgs SO-8 | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | E | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SO-8 | SO-8 | - |
| Number of Channels | 2 Channel | 2 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 6.8 A, 11.4 A | 6.8 A, 11.4 A | - |
| Rds On Drain Source Resistance | 11.5 mOhms, 18.5 mOhms | 11.5 mOhms, 18.5 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1 V | 1 V | - |
| Vgs Gate Source Voltage | 20 V | 10 V | - |
| Qg Gate Charge | 7.8 nC, 11.6 nC | 7.8 nC, 11.6 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 1.4 W, 2.4 W | 1.4 W, 2.4 W | - |
| Configuration | Dual | Dual | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | TrenchFET | TrenchFET | - |
| Packaging | Reel | Reel | - |
| Height | 1.75 mm | 1.75 mm | - |
| Length | 4.9 mm | 4.9 mm | - |
| Series | SI4 | SI4 | - |
| Transistor Type | 2 N-Channel | 2 N-Channel | - |
| Width | 3.9 mm | 3.9 mm | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Forward Transconductance Min | 30 S, 31 S | 30 S, 31 S | - |
| Fall Time | 9 ns, 11 ns | 9 ns, 11 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 9 ns, 9 ns | 9 ns, 9 ns | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 24 ns, 31 ns | 24 ns, 31 ns | - |
| Typical Turn On Delay Time | 11 ns, 13 ns | 11 ns, 13 ns | - |
| Part # Aliases | SI4816BDY-E3 | SI4816DY-T1-E3-S | - |
| Unit Weight | 0.006596 oz | 0.006596 oz | - |