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SI4816BDY-T1-E3

SI4816BDY-T1-E3
Mfr. #:
SI4816BDY-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 30V Vds 20V Vgs SO-8
Lifecycle:
New from this manufacturer.
Datasheet:
SI4816BDY-T1-E3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4816BDY-T1-E3 DatasheetSI4816BDY-T1-E3 Datasheet (P4-P6)SI4816BDY-T1-E3 Datasheet (P7-P9)SI4816BDY-T1-E3 Datasheet (P10-P12)
ECAD Model:
More Information:
SI4816BDY-T1-E3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
E
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
SO-8
Number of Channels:
2 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
6.8 A, 11.4 A
Rds On - Drain-Source Resistance:
11.5 mOhms, 18.5 mOhms
Vgs th - Gate-Source Threshold Voltage:
1 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
7.8 nC, 11.6 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
1.4 W, 2.4 W
Configuration:
Dual
Channel Mode:
Enhancement
Tradename:
TrenchFET
Packaging:
Reel
Height:
1.75 mm
Length:
4.9 mm
Series:
SI4
Transistor Type:
2 N-Channel
Width:
3.9 mm
Brand:
Vishay / Siliconix
Forward Transconductance - Min:
30 S, 31 S
Fall Time:
9 ns, 11 ns
Product Type:
MOSFET
Rise Time:
9 ns, 9 ns
Factory Pack Quantity:
2500
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
24 ns, 31 ns
Typical Turn-On Delay Time:
11 ns, 13 ns
Part # Aliases:
SI4816BDY-E3
Unit Weight:
0.006596 oz
Tags
SI4816BDY-T, SI4816BD, SI4816B, SI4816, SI481, SI48, SI4
Service Guarantees

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Quality Guarantees

We provide 90-360 days warranty.

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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
SI4816BDY-T1-E3 N-channel MOSFET Module; 5.8 A; 8.2 A; 30 V; 8-Pin SOIC
***et Europe
Transistor MOSFET Array Dual N-CH 30V 5.8A/8.2A 8-Pin SOIC T/R
***ure Electronics
Dual N-Channel 30 V 18.5 mOhms Surface Mount Power Mosfet - SOIC-8
***roFlash
Small Signal Field-Effect Transistor, 5.8A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ment14 APAC
DUAL N CHANNEL MOSFET, 30V, SOIC; Transi; DUAL N CHANNEL MOSFET, 30V, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:8.2A; Drain Source Voltage Vds, N Channel:30V; On Resistance Rds(on), N Channel:0.0093ohm; Rds(on) Test Voltage Vgs:20V
***et Europe
Trans MOSFET N-CH 30V 7.3A 8-Pin SOIC N T/R
*** Electronics
MOSFET 30V 9.5A 2.5W 16mohm @ 10V
***ment14 APAC
N-CH 30-V (D-S) MOSFET W/SCHOTTKY
***S
French Electronic Distributor since 1988
***ark
MOSFET+DIODE,N CH,30V,7.3A,SO8; Transistor Polarity:N Channel; Current Id Max:7.3A; Drain Source Voltage Vds:30V; On State Resistance:13mohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:20V; Power Dissipation:1.4W; Operating ;RoHS Compliant: Yes
***(Formerly Allied Electronics)
SI4410DYPBF N-channel MOSFET Transistor; 10 A; 30 V; 8-Pin SOIC
***ure Electronics
Single N-Channel 30 V 0.0135 Ohm 30 nC HEXFET® Power Mosfet - SOIC-8
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low Switching Losses; Low Conduction Losses
***ical
Trans MOSFET N-CH 30V 10A 8-Pin SOIC N T/R
***ment14 APAC
N CHANNEL MOSFET, 30V, 10A; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:30V; On Resistance Rds(on):20mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:1V
***nell
MOSFET, N LOGIC SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0135ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 10A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 50A; SMD Marking: SI4410DY; Termination Type: Surface Mount Device; Voltage Vgs th Min: 1V
***ure Electronics
Single P-Channel 30 V 13.3 mOhm 38 nC HEXFET® Power Mosfet - SOIC-8
***ark
MOSFET, P CH, -30V, 0.0133OHM, -9.2A, SOIC-8
***(Formerly Allied Electronics)
MOSFET, P-CHANNEL, -30V, -9.2A, 19.4 MOHM, 25VGS, SO-8
***ineon SCT
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***ineon
Benefits: RoHS Compliant; P-Channel MOSFET | Target Applications: Battery Protection; Load Switch High Side; Load Switch Low Side
***roFlash
Power Field-Effect Transistor, 9.2A I(D), 30V, 0.0194ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***nell
MOSFET, P-CH, -30V, -9.2A, SOIC; Transistor Polarity: P Channel; Continuous Drain Current Id: -9.2A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.0133ohm; Rds(on) Test Voltage Vgs: -20V; Threshold Voltage Vgs: -1.8V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***et Japan
Transistor MOSFET Array Dual N-CH 30V 7.8A/8.9A 8-Pin SOIC T/R
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:8.9A; On Resistance, Rds(on):17.1mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:SO-8 ;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; Low RDS(on); Low Thermal resistance to PCB; Compatible with Existing Surface Mount Techniques; Low RDS(ON) at 4.5V VGS; Very Low Gate Charge; Dual N-Channel MOSFET
***p One Stop Global
Trans MOSFET N-CH 30V 8.5A 8-Pin SO T/R
***des Inc SCT
N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS
***el Nordic
Contact for details
***ical
Trans MOSFET N-CH 30V 10A Automotive 8-Pin SO T/R
***des Inc SCT
N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS
***i-Key
MOSFET N-CH 30V 10A 8SO
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
Part # Mfg. Description Stock Price
SI4816BDY-T1-E3
DISTI # 30601955		Vishay IntertechnologiesTrans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R
RoHS: Compliant		66
  • 50:$1.1896
  • 11:$1.7340
SI4816BDY-T1-E3
DISTI # SI4816BDY-T1-E3CT-ND		Vishay SiliconixMOSFET 2N-CH 30V 5.8A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1643In Stock
  • 1000:$0.8707
  • 500:$1.0509
  • 100:$1.3511
  • 10:$1.6810
  • 1:$1.8600
SI4816BDY-T1-E3
DISTI # SI4816BDY-T1-E3DKR-ND		Vishay SiliconixMOSFET 2N-CH 30V 5.8A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1643In Stock
  • 1000:$0.8707
  • 500:$1.0509
  • 100:$1.3511
  • 10:$1.6810
  • 1:$1.8600
SI4816BDY-T1-E3
DISTI # SI4816BDY-T1-E3TR-ND		Vishay SiliconixMOSFET 2N-CH 30V 5.8A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		On Order
  • 2500:$0.7871
SI4816BDY-T1-E3
DISTI # C1S803601527611		Vishay IntertechnologiesMOSFETs
RoHS: Compliant		66
  • 50:$0.9330
  • 10:$1.3600
  • 1:$1.9700
SI4816BDY-T1-E3
DISTI # SI4816BDY-T1-E3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4816BDY-T1-E3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.4919
  • 5000:$0.4769
  • 10000:$0.4579
  • 15000:$0.4449
  • 25000:$0.4329
SI4816BDY-T1-E3
DISTI # 4500000		Vishay IntertechnologiesTrans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R - Bulk (Alt: 4500000)
Min Qty: 1
Container: Bulk		Americas - 0
    SI4816BDY-T1-E3
    DISTI # 73W9413    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R - Tape and Reel (Alt: 73W9413)
    RoHS: Not Compliant
    Min Qty: 1
    Container: Reel    		Americas - 0
    • 1:$1.0600
    SI4816BDY-T1-E3
    DISTI # 51K6965    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 51K6965)
    RoHS: Not Compliant
    Min Qty: 1
    Container: Ammo Pack    		Americas - 0
    • 1:$1.9800
    • 10:$1.6400
    • 25:$1.5200
    • 50:$1.3900
    • 100:$1.2700
    • 250:$1.1900
    • 500:$1.1100
    SI4816BDY-T1-E3
    DISTI # 51K6965    		Vishay IntertechnologiesDUAL N CHANNEL MOSFET, 30V, SOIC,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:5.8A,Drain Source Voltage Vds:30V,On Resistance Rds(on):15.5mohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:3V , RoHS Compliant: Yes430
    • 1:$1.9800
    • 10:$1.6400
    • 25:$1.5200
    • 50:$1.3900
    • 100:$1.2700
    • 250:$1.1900
    • 500:$1.1100
    SI4816BDY-T1-E3
    DISTI # 73W9413    		Vishay IntertechnologiesMOSFET, DUAL N CHANNEL, 30V, 0.0093OHM, 8.2A, SOIC-8, FULL REEL,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:8.2A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0093ohm,Rds(on) Test Voltage Vgs:10V , RoHS Compliant: Yes2500
    • 1:$1.0600
    • 2500:$1.0600
    SI4816BDY-T1-E3.
    DISTI # 28AC2145    		Vishay IntertechnologiesDUAL N-CH 30-V (D-S) MOSFET W/SCHOTTKY , ROHS COMPLIANT: NO0
    • 1:$0.4920
    • 5000:$0.4770
    • 10000:$0.4580
    • 15000:$0.4450
    • 25000:$0.4330
    SI4816BDY-T1-E3
    DISTI # 70026226    		Vishay SiliconixSI4816BDY-T1-E3 N-channel MOSFET Module,5.8 A,8.2 A,30 V,8-Pin SOIC
    RoHS: Compliant    		0
    • 2500:$0.8400
    • 5000:$0.8100
    • 7500:$0.7600
    SI4816BDY-T1-E3/BKN
    DISTI # 70026361    		Vishay SiliconixDUAL N-CH 30-V (D-S) MOSFET W/SCHOT
    RoHS: Compliant    		0
    • 1:$1.0200
    • 100:$0.9700
    • 250:$0.9200
    • 500:$0.8700
    • 1000:$0.8300
    SI4816BDY-T1-E3
    DISTI # 781-SI4816BDY-E3    		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs SO-8
    RoHS: Compliant    		101
    • 1:$1.6500
    • 10:$1.3700
    • 100:$1.0600
    • 500:$0.9280
    • 1000:$0.8850
    • 2500:$0.8840
    SI4816BDY-T1-E3Vishay Intertechnologies 146
      SI4816BDY-T1-E3Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs SO-8Americas -
        SI4816BDY-T1-E3
        DISTI # 2524656        		Vishay IntertechnologiesMOSFET, DUAL N CHANNEL, 30V, 0.0093OHM,
        RoHS: Compliant        		2500
        • 2500:£0.9320
        SI4816BDY-T1-E3
        DISTI # 2547314        		Vishay IntertechnologiesMOSFET, DUAL N-CH, 30V, 5.8A, NSOIC-8
        RoHS: Compliant        		50
        • 1:$2.6200
        • 10:$2.1700
        • 100:$1.6800
        • 500:$1.4700
        • 1000:$1.4000
        • 2500:$1.4000
        SI4816BDY-T1-E3
        DISTI # 2524656        		Vishay IntertechnologiesMOSFET, DUAL N CHANNEL, 30V, 0.0093OHM, 8.2A, SOIC-8, FULL REEL
        RoHS: Compliant        		2500
        • 2500:$2.4700
        • 5000:$1.9000
        • 10000:$1.5200
        SI4816BDY-T1-E3
        DISTI # XSFP00000063478        		Vishay Siliconix 
        RoHS: Compliant        		6730
        • 2500:$1.1200
        • 6730:$1.0200
        Image Part # Description
        ADCMP341YRJZ-REEL7

        Mfr.#: ADCMP341YRJZ-REEL7

        OMO.#: OMO-ADCMP341YRJZ-REEL7

        		 Analog Comparators Dual 0.275% Ref
        SM6T6V8A

        Mfr.#: SM6T6V8A

        OMO.#: OMO-SM6T6V8A

        		 TVS Diodes / ESD Suppressors 600W 6.8V Unidirect
        SMAJ5.0A

        Mfr.#: SMAJ5.0A

        OMO.#: OMO-SMAJ5-0A

        		 TVS Diodes / ESD Suppressors 400W 5V 5% Uni-Directional
        SMBJ12A-TR

        Mfr.#: SMBJ12A-TR

        OMO.#: OMO-SMBJ12A-TR

        		 TVS Diodes / ESD Suppressors 600W 12V Unidirect
        IRF7416TRPBF

        Mfr.#: IRF7416TRPBF

        OMO.#: OMO-IRF7416TRPBF

        		 MOSFET MOSFT PCh -30V -10A 20mOhm 61nC
        NS10165T220MNA

        Mfr.#: NS10165T220MNA

        OMO.#: OMO-NS10165T220MNA

        		 Fixed Inductors 10165 22uH 37.6mOhms +/-20% 3410mA HiCur
        CC1206KKX7R7BB475

        Mfr.#: CC1206KKX7R7BB475

        OMO.#: OMO-CC1206KKX7R7BB475

        		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 4.7 uF, 10%, 16V
        ADCMP341YRJZ-REEL7

        Mfr.#: ADCMP341YRJZ-REEL7

        OMO.#: OMO-ADCMP341YRJZ-REEL7-ANALOG-DEVICES-INC-ADI

        		 Analog Comparators Dual 0.275% Ref
        SMBJ12A-TR

        Mfr.#: SMBJ12A-TR

        OMO.#: OMO-SMBJ12A-TR-STMICROELECTRONICS

        		 TVS DIODE 12V 25.3V SMB
        SMAJ5.0A

        Mfr.#: SMAJ5.0A

        OMO.#: OMO-SMAJ5-0A-LITTELFUSE

        		 TVS Diodes - Transient Voltage Suppressors 5Vr 400W 43.5A 5% UniDirectional
        Availability
        Stock:
        Available
        On Order:
        1992
        Enter Quantity:
        Current price of SI4816BDY-T1-E3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
        Reference price (USD)
        Quantity
        Unit Price
        Ext. Price
        1
        $1.64
        $1.64
        10
        $1.36
        $13.60
        100
        $1.06
        $106.00
        500
        $0.93
        $463.50
        1000
        $0.77
        $768.00
        Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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