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| PartNumber | SIA921EDJ-T1-GE3 | SIA921EDJ-T4-GE3 | SIA920DJ-T1-GE3 |
| Description | MOSFET -20V Vds 12V Vgs PowerPAK SC-70 | MOSFET -20V Vds 12V Vgs PowerPAK SC-70 | MOSFET 2N-CH 8V 4.5A SC-70 |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PowerPAK-SC70-6 | PowerPAK-SC70-6 | - |
| Number of Channels | 2 Channel | 2 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 20 V | 20 V | - |
| Id Continuous Drain Current | 4.5 A | 4.5 A | - |
| Rds On Drain Source Resistance | 48 mOhms, 48 mOhms | 59 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.4 V | 500 mV | - |
| Vgs Gate Source Voltage | 12 V | 12 V | - |
| Qg Gate Charge | 23 nC, 23 nC | 23 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 7.8 W | 7.8 W | - |
| Configuration | Dual | Dual | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | TrenchFET, PowerPAK | TrenchFET | - |
| Packaging | Reel | Reel | - |
| Height | 0.75 mm | - | - |
| Length | 2.05 mm | - | - |
| Series | SIA | SIA | - |
| Transistor Type | 2 P-Channel | 2 P-Channel | - |
| Width | 2.05 mm | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Forward Transconductance Min | 11 S, 11 S | 11 S | - |
| Fall Time | 10 ns, 10 ns | 10 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 20 ns, 20 ns | 20 ns | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 25 ns, 25 ns | 25 ns | - |
| Typical Turn On Delay Time | 20 ns, 20 ns | 20 ns | - |
| Part # Aliases | SIA921EDJ-GE3 | - | - |
| Unit Weight | 0.000988 oz | - | - |