SIA921EDJ-T4-GE3

SIA921EDJ-T4-GE3
Mfr. #:
SIA921EDJ-T4-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -20V Vds 12V Vgs PowerPAK SC-70
Lifecycle:
New from this manufacturer.
Datasheet:
SIA921EDJ-T4-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIA921EDJ-T4-GE3 DatasheetSIA921EDJ-T4-GE3 Datasheet (P4-P6)SIA921EDJ-T4-GE3 Datasheet (P7-P9)
ECAD Model:
More Information:
SIA921EDJ-T4-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
PowerPAK-SC70-6
Number of Channels:
2 Channel
Transistor Polarity:
P-Channel
Vds - Drain-Source Breakdown Voltage:
20 V
Id - Continuous Drain Current:
4.5 A
Rds On - Drain-Source Resistance:
59 mOhms
Vgs th - Gate-Source Threshold Voltage:
500 mV
Vgs - Gate-Source Voltage:
12 V
Qg - Gate Charge:
23 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
7.8 W
Configuration:
Dual
Channel Mode:
Enhancement
Tradename:
TrenchFET
Packaging:
Reel
Series:
SIA
Transistor Type:
2 P-Channel
Brand:
Vishay / Siliconix
Forward Transconductance - Min:
11 S
Fall Time:
10 ns
Product Type:
MOSFET
Rise Time:
20 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
25 ns
Typical Turn-On Delay Time:
20 ns
Tags
SIA921EDJ-T, SIA921, SIA92, SIA9, SIA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET 2P-CH 20V 4.5A SC70-6
***et
DUAL P-CHANNEL 20-V (D-S) MOSFET
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
Part # Mfg. Description Stock Price
SIA921EDJ-T4-GE3
DISTI # V36:1790_09216859
Vishay IntertechnologiesTrans MOSFET P-CH 20V 4.5A 6-Pin PowerPAK SC-70 T/R
RoHS: Compliant
0
  • 3000000:$0.2209
  • 1500000:$0.2210
  • 300000:$0.2303
  • 30000:$0.2444
  • 3000:$0.2467
SIA921EDJ-T4-GE3
DISTI # SIA921EDJ-T4-GE3-ND
Vishay SiliconixMOSFET 2P-CH 20V 4.5A SC70-6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 3000:$0.2467
SIA921EDJ-T4-GE3
DISTI # SIA921EDJ-T4-GE3
Vishay IntertechnologiesDUAL P-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SIA921EDJ-T4-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 30000:$0.1699
  • 18000:$0.1749
  • 12000:$0.1799
  • 6000:$0.1879
  • 3000:$0.1939
SIA921EDJ-T4-GE3
DISTI # 78-SIA921EDJ-T4-GE3
Vishay IntertechnologiesMOSFET -20V Vds 12V Vgs PowerPAK SC-70
RoHS: Compliant
0
  • 1:$0.6500
  • 10:$0.5170
  • 100:$0.3930
  • 500:$0.3240
  • 1000:$0.2600
  • 3000:$0.2350
  • 6000:$0.2190
  • 9000:$0.2110
  • 24000:$0.2030
Image Part # Description
SIA921EDJ-T1-GE3

Mfr.#: SIA921EDJ-T1-GE3

OMO.#: OMO-SIA921EDJ-T1-GE3

MOSFET -20V Vds 12V Vgs PowerPAK SC-70
SIA921EDJ-T4-GE3

Mfr.#: SIA921EDJ-T4-GE3

OMO.#: OMO-SIA921EDJ-T4-GE3

MOSFET -20V Vds 12V Vgs PowerPAK SC-70
SIA921EDJ-T1-GE3

Mfr.#: SIA921EDJ-T1-GE3

OMO.#: OMO-SIA921EDJ-T1-GE3-VISHAY

MOSFET 2P-CH 20V 4.5A SC70-6
SIA921EDJ-T1/GE3

Mfr.#: SIA921EDJ-T1/GE3

OMO.#: OMO-SIA921EDJ-T1-GE3-1190

New and Original
SIA921EDJ-T4-GE3

Mfr.#: SIA921EDJ-T4-GE3

OMO.#: OMO-SIA921EDJ-T4-GE3-VISHAY

MOSFET 2P-CH 20V 4.5A SC70-6
SIA921EDJT1GE3

Mfr.#: SIA921EDJT1GE3

OMO.#: OMO-SIA921EDJT1GE3-1190

Power Field-Effect Transistor, 4.5A I(D), 20V, 0.059ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Availability
Stock:
Available
On Order:
1000
Enter Quantity:
Current price of SIA921EDJ-T4-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$0.65
$0.65
10
$0.52
$5.17
100
$0.39
$39.30
500
$0.32
$162.00
1000
$0.26
$260.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Start with
Newest Products
  • -12 V and -20 V P-Channel Gen III MOSFETs
    Vishay's TrenchFET® MOSFETs features low on-resistance for -12 V and -20 V devices, allowing for lower voltage drops.
  • DG2788A Dual DPDT / Quad SPDT Analog Switch
    Vishay introduces the dual DPDT / quad SPDT analog switch featuring low resistance of 0.37 Ω at 2.7 V in the compact 2.6 mm x 1.8 mm x 0.55 mm miniQFN16 package.
  • Smart Load Switches
    Vishay's smart load switch features a simplified GPIO control can be used to implement power distribution and sequencing of multiple-sub-systems.
  • Compare SIA921EDJ-T4-GE3
    SIA920DJT1GE3 vs SIA921EDJT1GE3 vs SIA921EDJT4GE3
  • SUM70101EL 100 V P-Channel MOSFET
    Vishay Siliconix's SUM70101EL MOSFET has industry leading RDS(ON) (0.0101 Ω at -10 V and 0.015 Ω at -4.5 V) minimizes conduction loss and increases efficiency.
  • DGQ2788A AEC-Q100 Qualified Analog Switch
    The wide operation voltage range, low resistance, and high bandwidth of Vishay Siliconix's DGQ2788A make it ideal for a variety of design needs, simplifying the BOM.
Top