SIA921EDJ-T

SIA921EDJ-T1-GE3 vs SIA921EDJ-T4-GE3

 
PartNumberSIA921EDJ-T1-GE3SIA921EDJ-T4-GE3
DescriptionMOSFET -20V Vds 12V Vgs PowerPAK SC-70MOSFET -20V Vds 12V Vgs PowerPAK SC-70
ManufacturerVishayVishay
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CasePowerPAK-SC70-6PowerPAK-SC70-6
Number of Channels2 Channel2 Channel
Transistor PolarityP-ChannelP-Channel
Vds Drain Source Breakdown Voltage20 V20 V
Id Continuous Drain Current4.5 A4.5 A
Rds On Drain Source Resistance48 mOhms, 48 mOhms59 mOhms
Vgs th Gate Source Threshold Voltage1.4 V500 mV
Vgs Gate Source Voltage12 V12 V
Qg Gate Charge23 nC, 23 nC23 nC
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation7.8 W7.8 W
ConfigurationDualDual
Channel ModeEnhancementEnhancement
TradenameTrenchFET, PowerPAKTrenchFET
PackagingReelReel
Height0.75 mm-
Length2.05 mm-
SeriesSIASIA
Transistor Type2 P-Channel2 P-Channel
Width2.05 mm-
BrandVishay / SiliconixVishay / Siliconix
Forward Transconductance Min11 S, 11 S11 S
Fall Time10 ns, 10 ns10 ns
Product TypeMOSFETMOSFET
Rise Time20 ns, 20 ns20 ns
Factory Pack Quantity30003000
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time25 ns, 25 ns25 ns
Typical Turn On Delay Time20 ns, 20 ns20 ns
Part # AliasesSIA921EDJ-GE3-
Unit Weight0.000988 oz-
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SIA921EDJ-T1-GE3 MOSFET -20V Vds 12V Vgs PowerPAK SC-70
SIA921EDJ-T4-GE3 MOSFET -20V Vds 12V Vgs PowerPAK SC-70
Vishay
Vishay
SIA921EDJ-T1-GE3 MOSFET 2P-CH 20V 4.5A SC70-6
SIA921EDJ-T4-GE3 MOSFET 2P-CH 20V 4.5A SC70-6
SIA921EDJ-T1/GE3 New and Original
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