PartNumber | SIA921EDJ-T1-GE3 | SIA921EDJ-T4-GE3 |
Description | MOSFET -20V Vds 12V Vgs PowerPAK SC-70 | MOSFET -20V Vds 12V Vgs PowerPAK SC-70 |
Manufacturer | Vishay | Vishay |
Product Category | MOSFET | MOSFET |
RoHS | Y | Y |
Technology | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT |
Package / Case | PowerPAK-SC70-6 | PowerPAK-SC70-6 |
Number of Channels | 2 Channel | 2 Channel |
Transistor Polarity | P-Channel | P-Channel |
Vds Drain Source Breakdown Voltage | 20 V | 20 V |
Id Continuous Drain Current | 4.5 A | 4.5 A |
Rds On Drain Source Resistance | 48 mOhms, 48 mOhms | 59 mOhms |
Vgs th Gate Source Threshold Voltage | 1.4 V | 500 mV |
Vgs Gate Source Voltage | 12 V | 12 V |
Qg Gate Charge | 23 nC, 23 nC | 23 nC |
Minimum Operating Temperature | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C |
Pd Power Dissipation | 7.8 W | 7.8 W |
Configuration | Dual | Dual |
Channel Mode | Enhancement | Enhancement |
Tradename | TrenchFET, PowerPAK | TrenchFET |
Packaging | Reel | Reel |
Height | 0.75 mm | - |
Length | 2.05 mm | - |
Series | SIA | SIA |
Transistor Type | 2 P-Channel | 2 P-Channel |
Width | 2.05 mm | - |
Brand | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 11 S, 11 S | 11 S |
Fall Time | 10 ns, 10 ns | 10 ns |
Product Type | MOSFET | MOSFET |
Rise Time | 20 ns, 20 ns | 20 ns |
Factory Pack Quantity | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 25 ns, 25 ns | 25 ns |
Typical Turn On Delay Time | 20 ns, 20 ns | 20 ns |
Part # Aliases | SIA921EDJ-GE3 | - |
Unit Weight | 0.000988 oz | - |