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| PartNumber | SIDR626DP-T1-GE3 | SIDR622DP-T1-GE3 | SIDR626DP |
| Description | MOSFET 60V Vds 20V Vgs PowerPAK SO-8DC | MOSFET 150V Vds 20V Vgs PowerPAK SO-8DC | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PowerPAK-SO-8DC-8 | PowerPAK-SO-8DC-8 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | 150 V | - |
| Id Continuous Drain Current | 100 A | 64.6 A | - |
| Rds On Drain Source Resistance | 1.7 mOhms | 17.7 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | 2.5 V | - |
| Vgs Gate Source Voltage | 10 V | 10 V | - |
| Qg Gate Charge | 68 nC | 27 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 125 W | 125 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | TrenchFET | TrenchFET | - |
| Packaging | Reel | Reel | - |
| Series | SID | SID | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Forward Transconductance Min | 78 S | 33 S | - |
| Fall Time | 11 ns | 6 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 24 ns | 6 ns | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 30 ns | 18 ns | - |
| Typical Turn On Delay Time | 16 ns | 13 ns | - |