SIDR622DP-T1-GE3

SIDR622DP-T1-GE3
Mfr. #:
SIDR622DP-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 150V Vds 20V Vgs PowerPAK SO-8DC
Lifecycle:
New from this manufacturer.
Datasheet:
SIDR622DP-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIDR622DP-T1-GE3 DatasheetSIDR622DP-T1-GE3 Datasheet (P4-P6)SIDR622DP-T1-GE3 Datasheet (P7-P8)
ECAD Model:
More Information:
SIDR622DP-T1-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
PowerPAK-SO-8DC-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
150 V
Id - Continuous Drain Current:
64.6 A
Rds On - Drain-Source Resistance:
17.7 mOhms
Vgs th - Gate-Source Threshold Voltage:
2.5 V
Vgs - Gate-Source Voltage:
10 V
Qg - Gate Charge:
27 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
125 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
TrenchFET
Packaging:
Reel
Series:
SID
Transistor Type:
1 N-Channel
Brand:
Vishay / Siliconix
Forward Transconductance - Min:
33 S
Fall Time:
6 ns
Product Type:
MOSFET
Rise Time:
6 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
18 ns
Typical Turn-On Delay Time:
13 ns
Tags
SIDR62, SIDR6, SIDR, SID
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
TrenchFET® Gen IV Top-Side Double Cooling MOSFETs
Vishay TrenchFET® Gen IV Top-Side Double Cooling MOSFETs feature top-side cooling and offer an additional venue for thermal transfer. These MOSFETs come in the PowerPAK® SO-8DC package. The TrenchFET double cooling MOSFETs offer variants with different drain-source breakdown voltages of 25V, 30V, 40V, 60V, 80V, 100V, 150V, and 200V. These N-channel MOSFETs operate at a temperature range from -55°C to 150°C. The TrenchFET MOSFETs can be utilized for product-specific applications including synchronous rectification, DC/DC conversion, power supplies, battery management, and others.
Part # Mfg. Description Stock Price
SIDR622DP-T1-GE3
DISTI # V72:2272_21764862
Vishay IntertechnologiesSIDR622DP-T1-GE35987
  • 3000:$1.3110
  • 1000:$1.6219
  • 500:$1.6390
  • 250:$1.8940
  • 100:$1.9130
  • 25:$2.4830
  • 10:$2.5080
  • 1:$3.3462
SIDR622DP-T1-GE3
DISTI # SIDR622DP-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CHAN 150V
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
On Order
  • 6000:$1.3797
  • 3000:$1.3969
SIDR622DP-T1-GE3
DISTI # SIDR622DP-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CHAN 150V
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 1000:$1.4922
  • 500:$1.7693
  • 100:$2.0784
  • 10:$2.5370
  • 1:$2.8200
SIDR622DP-T1-GE3
DISTI # SIDR622DP-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CHAN 150V
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 1000:$1.4922
  • 500:$1.7693
  • 100:$2.0784
  • 10:$2.5370
  • 1:$2.8200
SIDR622DP-T1-GE3
DISTI # 31607405
Vishay IntertechnologiesSIDR622DP-T1-GE35987
  • 3000:$1.3110
  • 1000:$1.6219
  • 500:$1.6390
  • 250:$1.8940
  • 100:$1.9130
  • 25:$2.4830
  • 10:$2.5080
  • 6:$3.3462
SIDR622DP-T1-GE3
DISTI # 59AC7337
Vishay IntertechnologiesN-CHANNEL 150-V (D-S) MOSFET0
  • 10000:$1.2400
  • 6000:$1.2900
  • 4000:$1.3300
  • 2000:$1.4800
  • 1000:$1.5600
  • 1:$1.6600
SIDR622DP-T1-GE3
DISTI # 78AC6502
Vishay IntertechnologiesMOSFET, N-CH, 150V, 56.7A, 150DEG C,Transistor Polarity:N Channel,Continuous Drain Current Id:56.7A,Drain Source Voltage Vds:150V,On Resistance Rds(on):0.0147ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4.5V,Power RoHS Compliant: Yes0
  • 500:$1.7500
  • 250:$1.8700
  • 100:$2.0000
  • 50:$2.1900
  • 25:$2.3800
  • 10:$2.5800
  • 1:$3.1000
SIDR622DP-T1-GE3
DISTI # 78-SIDR622DP-T1-GE3
Vishay IntertechnologiesMOSFET 150V Vds 20V Vgs PowerPAK SO-8DC
RoHS: Compliant
2466
  • 1:$3.0700
  • 10:$2.5500
  • 100:$1.9800
  • 500:$1.7300
  • 1000:$1.4300
  • 3000:$1.3400
  • 6000:$1.2900
SIDR622DP-T1-GE3
DISTI # 2932897
Vishay IntertechnologiesMOSFET, N-CH, 150V, 56.7A, 150DEG C
RoHS: Compliant
0
  • 1000:$2.2700
  • 500:$2.4000
  • 250:$2.5500
  • 100:$2.7700
  • 10:$3.2000
  • 1:$3.6700
SIDR622DP-T1-GE3
DISTI # 2932897
Vishay IntertechnologiesMOSFET, N-CH, 150V, 56.7A, 150DEG C0
  • 500:£1.2600
  • 250:£1.3500
  • 100:£1.4400
  • 10:£1.8700
  • 1:£2.5400
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Availability
Stock:
Available
On Order:
1985
Enter Quantity:
Current price of SIDR622DP-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$3.07
$3.07
10
$2.55
$25.50
100
$1.98
$198.00
500
$1.73
$865.00
1000
$1.43
$1 430.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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