PartNumber | SIDR610DP-T1-GE3 | SIDR622DP-T1-GE3 | SIDR608DP-T1-RE3 |
Description | MOSFET 200V Vds -/+20V Vgs PowerPAK SO-8DC | MOSFET 150V Vds 20V Vgs PowerPAK SO-8DC | MOSFET N-Channel 45 V (D-S) MOSFET |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | PowerPAK-SO-8DC-8 | PowerPAK-SO-8DC-8 | PowerPAK-SO-8 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 200 V | 150 V | 45 V |
Id Continuous Drain Current | 39.6 A | 64.6 A | 208 A |
Rds On Drain Source Resistance | 31.9 mOhms | 17.7 mOhms | 1.8 mOhms |
Vgs th Gate Source Threshold Voltage | 2 V | 2.5 V | 1.1 V |
Vgs Gate Source Voltage | 20 V | 10 V | - 16 V, 20 V |
Qg Gate Charge | 38 nC | 27 nC | 111 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 125 W | 125 W | 104 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | TrenchFET | TrenchFET | TrenchFET |
Packaging | Reel | Reel | Reel |
Series | SID | SID | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 27 S | 33 S | - |
Fall Time | 24 ns | 6 ns | 8 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 20 ns | 6 ns | 10 ns |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 20 ns | 18 ns | 50 ns |
Typical Turn On Delay Time | 9 ns | 13 ns | 19 ns |
Transistor Type | - | 1 N-Channel | 1 N-Channel |