SIDR668DP-T1-GE3

SIDR668DP-T1-GE3
Mfr. #:
SIDR668DP-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 100V Vds 20V Vgs PowerPAK SO-8DC
Lifecycle:
New from this manufacturer.
Datasheet:
SIDR668DP-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIDR668DP-T1-GE3 DatasheetSIDR668DP-T1-GE3 Datasheet (P4-P6)SIDR668DP-T1-GE3 Datasheet (P7-P8)
ECAD Model:
More Information:
SIDR668DP-T1-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
PowerPAK-SO-8DC-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
100 V
Id - Continuous Drain Current:
95 A
Rds On - Drain-Source Resistance:
5.05 mOhms
Vgs th - Gate-Source Threshold Voltage:
2 V
Vgs - Gate-Source Voltage:
7.5 V
Qg - Gate Charge:
72 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
125 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
TrenchFET
Packaging:
Reel
Series:
SID
Transistor Type:
1 N-Channel
Brand:
Vishay / Siliconix
Fall Time:
28 ns
Product Type:
MOSFET
Rise Time:
25 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
38 ns
Typical Turn-On Delay Time:
22 ns
Tags
SIDR6, SIDR, SID
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
TrenchFET® Gen IV Top-Side Double Cooling MOSFETs
Vishay TrenchFET® Gen IV Top-Side Double Cooling MOSFETs feature top-side cooling and offer an additional venue for thermal transfer. These MOSFETs come in the PowerPAK® SO-8DC package. The TrenchFET double cooling MOSFETs offer variants with different drain-source breakdown voltages of 25V, 30V, 40V, 60V, 80V, 100V, 150V, and 200V. These N-channel MOSFETs operate at a temperature range from -55°C to 150°C. The TrenchFET MOSFETs can be utilized for product-specific applications including synchronous rectification, DC/DC conversion, power supplies, battery management, and others.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Part # Mfg. Description Stock Price
SIDR668DP-T1-GE3
DISTI # 29499188
Vishay IntertechnologiesN-Channel 100 V (D-S) MOSFET3000
  • 3000:$1.4091
SIDR668DP-T1-GE3
DISTI # SIDR668DP-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 100V
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
5839In Stock
  • 1000:$1.4819
  • 500:$1.7885
  • 100:$2.1769
  • 10:$2.7080
  • 1:$3.0100
SIDR668DP-T1-GE3
DISTI # SIDR668DP-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 100V
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
5839In Stock
  • 1000:$1.4819
  • 500:$1.7885
  • 100:$2.1769
  • 10:$2.7080
  • 1:$3.0100
SIDR668DP-T1-GE3
DISTI # SIDR668DP-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 100V
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
3000In Stock
  • 6000:$1.3230
  • 3000:$1.3395
SIDR668DP-T1-GE3
DISTI # 59AC7340
Vishay IntertechnologiesN-CHANNEL 100-V (D-S) MOSFET0
  • 10000:$1.1900
  • 6000:$1.2300
  • 4000:$1.2800
  • 2000:$1.4200
  • 1000:$1.5000
  • 1:$1.5900
SIDR668DP-T1-GE3
DISTI # 78AC6505
Vishay IntertechnologiesMOSFET, N-CH, 100V, 95A, 150DEG C, 125W,Transistor Polarity:N Channel,Continuous Drain Current Id:95A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.004ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.4V,Power RoHS Compliant: Yes0
  • 500:$1.6700
  • 250:$1.7900
  • 100:$1.9100
  • 50:$2.0900
  • 25:$2.2700
  • 10:$2.4500
  • 1:$2.9600
SIDR668DP-T1-GE3
DISTI # 78-SIDR668DP-T1-GE3
Vishay IntertechnologiesMOSFET 100V Vds 20V Vgs PowerPAK SO-8DC
RoHS: Compliant
9739
  • 1:$2.9300
  • 10:$2.4300
  • 100:$1.8900
  • 500:$1.6500
  • 1000:$1.3700
  • 3000:$1.2700
  • 6000:$1.2200
SIDR668DP-T1-GE3
DISTI # 2932900
Vishay IntertechnologiesMOSFET, N-CH, 100V, 95A, 150DEG C, 125W6000
  • 500:£1.2100
  • 250:£1.3000
  • 100:£1.3800
  • 10:£1.7800
  • 1:£2.4200
SIDR668DP-T1-GE3
DISTI # 2932900
Vishay IntertechnologiesMOSFET, N-CH, 100V, 95A, 150DEG C, 125W
RoHS: Compliant
6000
  • 1000:$2.5300
  • 500:$2.6800
  • 250:$2.8400
  • 100:$3.1000
  • 10:$3.5700
  • 1:$4.1000
Image Part # Description
ATECC608A-SSHDA-B

Mfr.#: ATECC608A-SSHDA-B

OMO.#: OMO-ATECC608A-SSHDA-B

Security ICs / Authentication ICs ECC/ECDSA/ECDHE I2C SOIC Bulk
SKY65806-636LF

Mfr.#: SKY65806-636LF

OMO.#: OMO-SKY65806-636LF

RF Amplifier 3.4-3.8GHz NF 1.2dB SSG 13.5dB 1.6-3.3V
SKY65805-696LF

Mfr.#: SKY65805-696LF

OMO.#: OMO-SKY65805-696LF

RF Amplifier 2.3-2.69GHz NF 1.1dB SSG 13dB 1.5-3.3V
SKY65804-696LF

Mfr.#: SKY65804-696LF

OMO.#: OMO-SKY65804-696LF

RF Amplifier 1805-2170MHz SSG 14.5dB NF 1.1dB
LTC7000MPMSE#TRPBF

Mfr.#: LTC7000MPMSE#TRPBF

OMO.#: OMO-LTC7000MPMSE-TRPBF

Gate Drivers Fast 150V Protected High Side NMOS Static Switch Driver
AQHV15-01ETG-C

Mfr.#: AQHV15-01ETG-C

OMO.#: OMO-AQHV15-01ETG-C

TVS Diodes / ESD Suppressors 1CH 15V 200W SOD882
CSD19532Q5B

Mfr.#: CSD19532Q5B

OMO.#: OMO-CSD19532Q5B

MOSFET 100V 4.0 mOhm N-Ch NexFET Power MOSFET
TPS560430X3FDBVT

Mfr.#: TPS560430X3FDBVT

OMO.#: OMO-TPS560430X3FDBVT

Switching Voltage Regulators NIXON TPS560430X3FDBVT DC-DC CONVERTER
TLV76012DBZR

Mfr.#: TLV76012DBZR

OMO.#: OMO-TLV76012DBZR

LDO Voltage Regulators LOW-DROPOUT LINEAR VOLTAGE REGULATOR
TPS560430X3FDBVT

Mfr.#: TPS560430X3FDBVT

OMO.#: OMO-TPS560430X3FDBVT-TEXAS-INSTRUMENTS

IC REG BUCK 3.3V 600MA SOT23-6
Availability
Stock:
Available
On Order:
1992
Enter Quantity:
Current price of SIDR668DP-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$2.93
$2.93
10
$2.43
$24.30
100
$1.89
$189.00
500
$1.65
$825.00
1000
$1.37
$1 370.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Start with
Newest Products
Top