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Part # | Mfg. | Description | Stock | Price |
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SIDR626DP-T1-GE3 DISTI # V72:2272_21764850 | Vishay Intertechnologies | SIDR626DP-T1-GE3 | 2884 |
|
SIDR626DP-T1-GE3 DISTI # SIDR626DP-T1-GE3CT-ND | Vishay Siliconix | MOSFET N-CHAN 60V RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 5659In Stock |
|
SIDR626DP-T1-GE3 DISTI # SIDR626DP-T1-GE3DKR-ND | Vishay Siliconix | MOSFET N-CHAN 60V RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 5659In Stock |
|
SIDR626DP-T1-GE3 DISTI # SIDR626DP-T1-GE3TR-ND | Vishay Siliconix | MOSFET N-CHAN 60V RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | 3000In Stock |
|
SIDR626DP-T1-GE3 DISTI # 31012431 | Vishay Intertechnologies | SIDR626DP-T1-GE3 | 2884 |
|
SIDR626DP-T1-GE3 DISTI # SIDR626DP-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 60V 100A 8-Pin PowerPAK SO - Tape and Reel (Alt: SIDR626DP-T1-GE3) RoHS: Compliant Min Qty: 6000 Container: Reel | Americas - 0 |
|
SIDR626DP-T1-GE3 DISTI # 59AC7338 | Vishay Intertechnologies | N-CHANNEL 60-V (D-S) MOSFET | 0 |
|
SIDR626DP-T1-GE3 DISTI # 78AC6503 | Vishay Intertechnologies | MOSFET, N-CH, 60V, 100A, 150DEG C, 125W,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0014ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.4V,Power RoHS Compliant: Yes | 5840 |
|
SIDR626DP-T1-GE3 DISTI # 78-SIDR626DP-T1-GE3 | Vishay Intertechnologies | MOSFET 60V Vds 20V Vgs PowerPAK SO-8DC RoHS: Compliant | 5635 |
|
SIDR626DP-T1-GE3 DISTI # 2932898 | Vishay Intertechnologies | MOSFET, N-CH, 60V, 100A, 150DEG C, 125W RoHS: Compliant | 5840 |
|
SIDR626DP-T1-GE3 DISTI # 2932898 | Vishay Intertechnologies | MOSFET, N-CH, 60V, 100A, 150DEG C, 125W | 5840 |
|
Image | Part # | Description |
---|---|---|
Mfr.#: SIDR626DP-T1-GE3 OMO.#: OMO-SIDR626DP-T1-GE3 |
MOSFET 60V Vds 20V Vgs PowerPAK SO-8DC | |
Mfr.#: SIDR626DP-T1-GE3 OMO.#: OMO-SIDR626DP-T1-GE3-VISHAY |
MOSFET N-CHAN 60V | |
Mfr.#: SIDR626DP OMO.#: OMO-SIDR626DP-1190 |
New and Original |