PartNumber | SIDR626DP-T1-GE3 | SIDR622DP-T1-GE3 |
Description | MOSFET 60V Vds 20V Vgs PowerPAK SO-8DC | MOSFET 150V Vds 20V Vgs PowerPAK SO-8DC |
Manufacturer | Vishay | Vishay |
Product Category | MOSFET | MOSFET |
RoHS | Y | Y |
Technology | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT |
Package / Case | PowerPAK-SO-8DC-8 | PowerPAK-SO-8DC-8 |
Number of Channels | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 60 V | 150 V |
Id Continuous Drain Current | 100 A | 64.6 A |
Rds On Drain Source Resistance | 1.7 mOhms | 17.7 mOhms |
Vgs th Gate Source Threshold Voltage | 2 V | 2.5 V |
Vgs Gate Source Voltage | 10 V | 10 V |
Qg Gate Charge | 68 nC | 27 nC |
Minimum Operating Temperature | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C |
Pd Power Dissipation | 125 W | 125 W |
Configuration | Single | Single |
Channel Mode | Enhancement | Enhancement |
Tradename | TrenchFET | TrenchFET |
Packaging | Reel | Reel |
Series | SID | SID |
Transistor Type | 1 N-Channel | 1 N-Channel |
Brand | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 78 S | 33 S |
Fall Time | 11 ns | 6 ns |
Product Type | MOSFET | MOSFET |
Rise Time | 24 ns | 6 ns |
Factory Pack Quantity | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 30 ns | 18 ns |
Typical Turn On Delay Time | 16 ns | 13 ns |