SIDR610DP-T1-GE3

Mfr. #:: SIDR610DP-T1-GE3
Manufacturer:: Vishay / Siliconix
Description:: MOSFET 200V Vds -/+20V Vgs PowerPAK SO-8DC
Lifecycle:: New from this manufacturer.
Datasheet:: SIDR610DP-T1-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SIDR610DP-T1-GE3 Datasheet SIDR610DP-T1-GE3 Datasheet (P4-P6)SIDR610DP-T1-GE3 Datasheet (P7-P8)
ECAD Model:
More Information:: SIDR610DP-T1-GE3 more Information

Product Attribute
Attribute Value

Manufacturer:: Vishay

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: PowerPAK-SO-8DC-8

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 200 V

Id - Continuous Drain Current:: 39.6 A

Rds On - Drain-Source Resistance:: 31.9 mOhms

Vgs th - Gate-Source Threshold Voltage:: 2 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 38 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 125 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: TrenchFET

Packaging:: Reel

Series:: SID

Brand:: Vishay / Siliconix

Forward Transconductance - Min:: 27 S

Fall Time:: 24 ns

Product Type:: MOSFET

Rise Time:: 20 ns

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 20 ns

Typical Turn-On Delay Time:: 9 ns

Tags: SIDR6, SIDR, SID

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIDR610DP-T1-GE3 More Information

TrenchFET® Gen IV Top-Side Double Cooling MOSFETs: Vishay TrenchFET® Gen IV Top-Side Double Cooling MOSFETs feature top-side cooling and offer an additional venue for thermal transfer. These MOSFETs come in the PowerPAK® SO-8DC package. The TrenchFET double cooling MOSFETs offer variants with different drain-source breakdown voltages of 25V, 30V, 40V, 60V, 80V, 100V, 150V, and 200V. These N-channel MOSFETs operate at a temperature range from -55°C to 150°C. The TrenchFET MOSFETs can be utilized for product-specific applications including synchronous rectification, DC/DC conversion, power supplies, battery management, and others.

Market price

Part #	Mfg.	Description	Stock	Price
SIDR610DP-T1-GE3 DISTI # V99:2348_22587802	Vishay Intertechnologies	N-Channel 200 V (D-S) MOSFET	0
SIDR610DP-T1-GE3 DISTI # SIDR610DP-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CHAN 200V PPAK SO-8DC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	55In Stock	1000:$1.8601 500:$2.2055 100:$2.5908 10:$3.1620 1:$3.5200
SIDR610DP-T1-GE3 DISTI # SIDR610DP-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CHAN 200V PPAK SO-8DC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	55In Stock	1000:$1.8601 500:$2.2055 100:$2.5908 10:$3.1620 1:$3.5200
SIDR610DP-T1-GE3 DISTI # SIDR610DP-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CHAN 200V PPAK SO-8DC RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$1.7199
SIDR610DP-T1-GE3 DISTI # SIDR610DP-T1-GE3	Vishay Intertechnologies	N-CHANNEL 200-V (D-S) MOSFET - Tape and Reel (Alt: SIDR610DP-T1-GE3) RoHS: Compliant Min Qty: 6000 Container: Reel	Americas - 0	60000:$1.4900 18000:$1.5900 30000:$1.5900 6000:$1.6900 12000:$1.6900
SIDR610DP-T1-GE3 DISTI # 99AC0534	Vishay Intertechnologies	MOSFET, N-CH, 200V, 39.6A, 125W,Transistor Polarity:N Channel,Continuous Drain Current Id:39.6A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.0239ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes	0	500:$2.0600 250:$2.3000 100:$2.3700 50:$2.5500 25:$2.7200 10:$2.8900 1:$3.4800
SIDR610DP-T1-GE3 DISTI # 81AC3429	Vishay Intertechnologies	N-CHANNEL 200-V (D-S) MOSFET	0	20000:$1.5200 12000:$1.5400 8000:$1.6000 4000:$1.7200 2000:$1.8500 1:$1.9300
SIDR610DP-T1-GE3 DISTI # 78-SIDR610DP-T1-GE3	Vishay Intertechnologies	MOSFET 200V Vds -/+20V Vgs PowerPAK SO-8DC RoHS: Compliant	5934	1:$3.4500 10:$2.8600 100:$2.3500 250:$2.2800 500:$2.0400 1000:$1.7200 3000:$1.6400
SIDR610DP-T1-GE3 DISTI # 3014141	Vishay Intertechnologies	MOSFET, N-CH, 200V, 39.6A, 125W	0	500:£1.4900 250:£1.6700 100:£1.7200 10:£2.0900 1:£2.8400
SIDR610DP-T1-GE3 DISTI # 3014141	Vishay Intertechnologies	MOSFET, N-CH, 200V, 39.6A, 125W RoHS: Compliant	0	1000:$2.2800 500:$2.5000 250:$2.7600 100:$2.9800 10:$3.7400 1:$4.8200

Related products

Image	Part #	Description
	Mfr.#: TLV3201AIDCKR OMO.#: OMO-TLV3201AIDCKR	Analog Comparators 40ns,micro-Pwr,RRI Single-Ch Comparator
	Mfr.#: INA240A2PWR OMO.#: OMO-INA240A2PWR	Current Sense Amplifiers WIDE CM BI-DIR CURRENT SHUNT MONITOR
	Mfr.#: USBLC6-4SC6 OMO.#: OMO-USBLC6-4SC6	TVS Diodes / ESD Suppressors Low Cap ESD Protect
	Mfr.#: SN74LVC125APWR OMO.#: OMO-SN74LVC125APWR	Buffers & Line Drivers Tri-State Quad Bus
	Mfr.#: STS35-DIS OMO.#: OMO-STS35-DIS	Board Mount Temperature Sensors Sensor component
	Mfr.#: B82422A3101K100 OMO.#: OMO-B82422A3101K100	Fixed Inductors 100nH 440mA 10% 1210 SMD, AEC-Q200
	Mfr.#: 109S072UL OMO.#: OMO-109S072UL	AC Fans AC Fan, 120x38mm, 230VAC, San Ace
	Mfr.#: MS560702BA03-50 OMO.#: OMO-MS560702BA03-50	Board Mount Pressure Sensors Alt-Baro press sens 3x5x1mm 24bit T&R
	Mfr.#: TLV3201AIDCKR OMO.#: OMO-TLV3201AIDCKR-TEXAS-INSTRUMENTS	Analog Comparators 40ns,micro-Pwr,RRI Single-Ch Comparato
	Mfr.#: B82422A3101K100 OMO.#: OMO-B82422A3101K100-EPCOS	Fixed Inductors 100nH 440mA 10% 1210 SMD

Availability

Stock:: Available
On Order:: 1988
Enter Quantity:

Current price of SIDR610DP-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$3.45~~; ~~$3.45~~

10: ~~$2.86~~; ~~$28.60~~

100: ~~$2.35~~; ~~$235.00~~

250: ~~$2.28~~; ~~$570.00~~

500: ~~$2.04~~; ~~$1 020.00~~

1000: ~~$1.72~~; ~~$1 720.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

Start with

SIDR6 8
SIDR 16
SID 415

Newest Products

SIRA20DP TrenchFET® Gen IV MOSFET

Vishay Siliconix's SIRA20DP TrenchFET® Gen IV MOSFET provides the lowest maximum RDS(on) rating at VGS = 10 V.
TrenchFET® Power MOSFET Optimized for Standar

Vishay's 60 V TrenchFET® Gen IV n-channel power MOSFET is optimized for standard gate drives.
Compare SIDR610DP-T1-GE3

SIDR608DPT1RE3 vs SIDR610DPT1GE3 vs SIDR622DPT1GE3
650 V Fast Body Diode MOSFETs

Vishay’s 650 V EF series of fast body diode MOSFETs provides a full complement to Vishay's standard E series components by delivering a 10 times lower Qrr.
SiR626DP-T1-RE3 TrenchFET® Gen IV Power MOSFE

Vishay's SiR626DP-T1-RE3 N-Channel 60 V (D-S) TrenchFET® MOSFET features a very low RDS - Qg figure-of-merit (FOM).
Si7655DN -20 V P-Channel MOSFET

Vishay's MOSFET enables lower RDS(ON) while providing a slimmer profile and matching PCB pattern.

More Newest Products

SIDR610DP-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes