SiDR610DP
www.vishay.com
Vishay Siliconix
S17-1313-Rev. A, 21-Aug-17
1
Document Number: 75649
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-Channel 200 V (D-S) MOSFET
FEATURES
• TrenchFET
®
technology optimizes balance of
R
DS(on)
, Q
g
, Q
sw
, and Q
oss
• Tuned for the lowest R
DS
- Q
oss
FOM
• Top side cooling feature provides additional
venue for thermal transfer
• 100 % R
g
and UIS tested
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
•Fixed telecom
•DC/DC converter
• Primary and secondary side switch
• Synchronous rectification
• Power supplies
• Class D amplifier
Notes
a. T
C
= 25 °C
b. Surface mounted on 1" x 1" FR4 board
c. t = 10 s
d. See solder profile (www.vishay.com/doc?73257
). The PowerPAK SO-8DC is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Maximum under steady state conditions is 54 °C/W
PRODUCT SUMMARY
V
DS
(V) 200
R
DS(on)
max. () at V
GS
= 10 V 0.0319
R
DS(on)
max. () at V
GS
= 7.5 V 0.0334
Q
g
typ. (nC) 20
I
D
(A)
a
39.6
Configuration Single
PowerPAK
®
SO-8DC
Top View
S
1
6.15 mm
5
.15 mm
Bottom View
2
S
3
S
4
G
1
S
D
7
D
6
D
5
D
8
ORDERING INFORMATION
Package PowerPAK SO-8DC
Lead (Pb)-free and halogen-free SiDR610DP-T1-GE3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage V
DS
200
V
Gate-source voltage V
GS
± 20
Continuous drain current (T
J
= 150 °C)
T
C
= 25 °C
I
D
39.6
A
T
C
= 70 °C 31.7
T
A
= 25 °C 8.9
b, c
T
A
= 70 °C 7.1
b, c
Pulsed drain current (t = 100 μs) I
DM
80
Continuous source-drain diode current
T
C
= 25 °C
I
S
39.6
T
A
= 25 °C 5.6
b, c
Single pulse avalanche current
L = 0.1 mH
I
AS
30
Single pulse avalanche energy E
AS
45 mJ
Maximum power dissipation
T
C
= 25 °C
P
D
125
W
T
C
= 70 °C 80
T
A
= 25 °C 6.25
b, c
T
A
= 70 °C 4
b, c
Operating junction and storage temperature range T
J
, T
stg
-55 to +150
°C
Soldering recommendations (peak temperature)
c
260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum junction-to-ambient
b, f
t 10 s R
thJA
15 20
°C/WMaximum junction-to-case (drain) Steady state R
thJC
0.8 1
Maximum junction-to-case (source) Steady state R
thJC
1.1 1.4