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| PartNumber | SIHA6N80E-GE3 | SIHA690N60E-GE3 | SIHA6N65E-E3 |
| Description | MOSFET 800V Vds 30V Vgs TO-220 FULLPAK | MOSFET E Series Power MOSFET | MOSFET 650V Vds 30V Vgs TO-220 FULLPAK |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220FP-3 | TO-220FP-3 | TO-220FP-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 800 V | 600 V | 700 V |
| Id Continuous Drain Current | 5.4 A | 4.3 A | 7 A |
| Rds On Drain Source Resistance | 820 mOhms | 600 mOhms | 600 mOhms |
| Vgs th Gate Source Threshold Voltage | 4 V | 5 V | 4 V |
| Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
| Qg Gate Charge | 44 nC | 8 nC | 24 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 31 W | - | 31 W |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Series | E | E | SIH |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 2.5 S | - | - |
| Fall Time | 18 ns | 22 ns | 20 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 9 ns | 9 ns | 12 ns |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 27 ns | 19 ns | 30 ns |
| Typical Turn On Delay Time | 13 ns | 12 ns | 14 ns |
| Tradename | - | TrenchFET | - |
| Packaging | - | - | Tube |
| Factory Pack Quantity | - | - | 1000 |
| Unit Weight | - | - | 0.068784 oz |