SIHA6N80E-GE3

Mfr. #:: SIHA6N80E-GE3
Manufacturer:: Vishay / Siliconix
Description:: MOSFET 800V Vds 30V Vgs TO-220 FULLPAK
Lifecycle:: New from this manufacturer.
Datasheet:: SIHA6N80E-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SIHA6N80E-GE3 Datasheet SIHA6N80E-GE3 Datasheet (P4-P6)SIHA6N80E-GE3 Datasheet (P7)
ECAD Model:
More Information:: SIHA6N80E-GE3 more Information

Product Attribute
Attribute Value

Manufacturer:: Vishay

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-220FP-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 800 V

Id - Continuous Drain Current:: 5.4 A

Rds On - Drain-Source Resistance:: 820 mOhms

Vgs th - Gate-Source Threshold Voltage:: 4 V

Vgs - Gate-Source Voltage:: 30 V

Qg - Gate Charge:: 44 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 31 W

Configuration:: Single

Channel Mode:: Enhancement

Series:: E

Brand:: Vishay / Siliconix

Forward Transconductance - Min:: 2.5 S

Fall Time:: 18 ns

Product Type:: MOSFET

Rise Time:: 9 ns

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 27 ns

Typical Turn-On Delay Time:: 13 ns

Tags: SIHA6, SIHA, SIH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIHA6N80E-GE3 Description

***et Japan: Transistor MOSFET N-CH 800V 5.4A 3-Pin TO-220FP

***ment14 APAC: MOSFET, N-CH, 800V, 5.4A, 150DEG C, 31W; Transistor Polarity:N Channel; Continuous Drain Current Id:5.4A; Source Voltage Vds:800V; On

***nell: MOSFET, N-CH, 800V, 5.4A, 150DEG C, 31W; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.4A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 0.82ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 31W; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: E Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

SIHA6N80E-GE3 More Information

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

E Series High Voltage MOSFETs: Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Market price

Part #	Mfg.	Description	Stock	Price
SIHA6N80E-GE3 DISTI # V99:2348_21764824	Vishay Intertechnologies	SIHA6N80E-GE3	969	2500:$1.0758 1000:$1.1101 500:$1.4157 100:$1.6017 25:$1.9935 10:$2.0671 1:$2.6684
SIHA6N80E-GE3 DISTI # V36:1790_21764824	Vishay Intertechnologies	SIHA6N80E-GE3	0	1000000:$1.1030 500000:$1.1060 100000:$1.3990 10000:$1.9300 1000:$2.0200
SIHA6N80E-GE3 DISTI # SIHA6N80E-GE3-ND	Vishay Siliconix	MOSFET N-CHAN 800V TO-220FP RoHS: Compliant Min Qty: 1 Container: Tube	995In Stock	5000:$1.1043 3000:$1.1468 1000:$1.2317 100:$1.8093 25:$2.1236 10:$2.2510 1:$2.5100
SIHA6N80E-GE3 DISTI # 28956213	Vishay Intertechnologies	SIHA6N80E-GE3	969	2500:$1.0758 1000:$1.1101 500:$1.4157 100:$1.6017 25:$1.9935 10:$2.0671 7:$2.6684
SIHA6N80E-GE3 DISTI # SIHA6N80E-GE3	Vishay Intertechnologies	E Series Power MOSFET Single N-Channel 800V VDS ±30V 5.4A ID Thin Lead 3-Pin TO-220FP (Alt: SIHA6N80E-GE3) RoHS: Compliant Min Qty: 1	Europe - 0	1000:€1.0339 500:€1.0619 100:€1.0769 50:€1.0939 25:€1.2319 10:€1.4929 1:€2.1309
SIHA6N80E-GE3 DISTI # SIHA6N80E-GE3	Vishay Intertechnologies	E Series Power MOSFET Single N-Channel 800V VDS ±30V 5.4A ID Thin Lead 3-Pin TO-220FP - Tape and Reel (Alt: SIHA6N80E-GE3) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	10000:$1.0369 6000:$1.0649 4000:$1.0959 2000:$1.1419 1000:$1.1769
SIHA6N80E-GE3 DISTI # 78AC6516	Vishay Intertechnologies	MOSFET, N-CH, 800V, 5.4A, 150DEG C, 31W,Transistor Polarity:N Channel,Continuous Drain Current Id:5.4A,Drain Source Voltage Vds:800V,On Resistance Rds(on):0.82ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes	1000	1000:$1.1900 500:$1.4300 100:$1.6400 50:$1.7900 25:$1.9500 10:$2.1100 1:$2.5500
SIHA6N80E-GE3 DISTI # 78-SIHA6N80E-GE3	Vishay Intertechnologies	MOSFET 800V Vds 30V Vgs TO-220 FULLPAK RoHS: Compliant	1050	1:$2.5200 10:$2.0900 100:$1.6200 500:$1.4200 1000:$1.1800
SIHA6N80E-GE3 DISTI # 2932917	Vishay Intertechnologies	MOSFET, N-CH, 800V, 5.4A, 150DEG C, 31W	1000	500:£1.0400 250:£1.1200 100:£1.1900 10:£1.5400 1:£2.0900
SIHA6N80E-GE3 DISTI # 2932917	Vishay Intertechnologies	MOSFET, N-CH, 800V, 5.4A, 150DEG C, 31W RoHS: Compliant	1000	1000:$1.8600 500:$1.9700 250:$2.0900 100:$2.2700 10:$2.6200 1:$3.0100

Related products

Image	Part #	Description
	Mfr.#: SIHA6N80E-GE3 OMO.#: OMO-SIHA6N80E-GE3	MOSFET 800V Vds 30V Vgs TO-220 FULLPAK
	Mfr.#: SIHA6N65E-E3 OMO.#: OMO-SIHA6N65E-E3	MOSFET 650V Vds 30V Vgs TO-220 FULLPAK
	Mfr.#: SIHA6N65E-E3 OMO.#: OMO-SIHA6N65E-E3-VISHAY	MOSFET N-CHANNEL 650V 7A TO220
	Mfr.#: SIHA6N80E-GE3 OMO.#: OMO-SIHA6N80E-GE3-VISHAY	MOSFET N-CHAN 800V TO-220FP

Availability

Stock:: Available
On Order:: 1984
Enter Quantity:

Current price of SIHA6N80E-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$2.52~~; ~~$2.52~~

10: ~~$2.09~~; ~~$20.90~~

100: ~~$1.62~~; ~~$162.00~~

500: ~~$1.42~~; ~~$710.00~~

1000: ~~$1.18~~; ~~$1 180.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

Start with

SIHA6 3
SIHA 38
SIH 797

Newest Products

SIRA20DP TrenchFET® Gen IV MOSFET

Vishay Siliconix's SIRA20DP TrenchFET® Gen IV MOSFET provides the lowest maximum RDS(on) rating at VGS = 10 V.
TrenchFET® Power MOSFET Optimized for Standar

Vishay's 60 V TrenchFET® Gen IV n-channel power MOSFET is optimized for standard gate drives.
650 V Fast Body Diode MOSFETs

Vishay’s 650 V EF series of fast body diode MOSFETs provides a full complement to Vishay's standard E series components by delivering a 10 times lower Qrr.
Compare SIHA6N80E-GE3

SIHA690N60EGE3 vs SIHA6N65EE3 vs SIHA6N80EGE3
SiR626DP-T1-RE3 TrenchFET® Gen IV Power MOSFE

Vishay's SiR626DP-T1-RE3 N-Channel 60 V (D-S) TrenchFET® MOSFET features a very low RDS - Qg figure-of-merit (FOM).
Si7655DN -20 V P-Channel MOSFET

Vishay's MOSFET enables lower RDS(ON) while providing a slimmer profile and matching PCB pattern.

More Newest Products

SIHA6N80E-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes