Vishay Siliconix announces a new 30 V, asymmetric, dual TrenchFET power MOSFET in the PowerPAIR 3 mm by 3 mm package utilizing TrenchFET Gen IV technology. Providing 57% lower on-resistance, up to 25% higher power density, and 5% higher efficiency than previous-generation devices in this package size, the Vishay Siliconix SiZ340DT helps to reduce power loss, save space, and simplify the design of highly-efficient synchronous buck converters by combining a high- and low-side MOSFET in one compact package. The TrenchFET Gen IV technology of the SiZ340DT utilizes an advanced high-density design to reduce on-resistance and to optimize gate charges. Reducing power loss significantly, the SiZ340DT demonstrates better efficiency than competitors, particularly for output currents of 10 A and higher. With this higher efficiency, the SiZ340DT can run 30% cooler than previous-generation devices at the same output load, or provide increased power density. For typical DC/DC topologies with 10 A to 15 A output current and an output voltage below 2 V, the compact 3 mm by 3 mm footprint area of the SiZ340DT potentially saves up to 77% PCB space compared to using discrete solutions, such as a PowerPAK® 1212-8 MOSFET for the high- and a PowerPAK SO-8 for the low side. Reducing switching losses, the device allows higher switching frequencies beyond 450 kHz to shrink the PCB size, by enabling smaller inductors and capacitors.