SIHA6N80E-GE3 Datasheet SIHA6N80E-GE3 | P1-P3

SiHA6N80E

www.vishay.com

Vishay Siliconix

S17-1186-Rev. A, 31-Jul-17

1

Document Number: 92016

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

E Series Power MOSFET

FEATURES

• Low figure-of-merit (FOM) R

on

x Q

g

• Low input capacitance (C

iss

)

• Reduced switching and conduction losses

• Ultra low gate charge (Q

g

)

• Avalanche energy rated (UIS)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

• Server and telecom power supplies

• Switch mode power supplies (SMPS)

• Power factor correction power supplies (PFC)

• Lighting

- High-intensity discharge (HID)

- Fluorescent ballast lighting

• Industrial

- Welding

- Induction heating

- Motor drives

- Battery chargers

- Renewable energy

- Solar (PV inverters)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature

b. V

DD

= 140 V, starting T

J

= 25 °C, L = 28.2 mH, R

g

= 25 Ω, I

AS

= 2.6 A

c. 1.6 mm from case

d. I

SD

≤ I

D

, di/dt = 100 A/μs, starting T

J

= 25 °C

e. Limited by maximum junction temperature

PRODUCT SUMMARY

V

DS

(V) at T

J

max. 850

R

DS(on)

typ. (Ω) at 25 °C V

GS

= 10 V 0.82

Q

g

max. (nC) 44

Q

gs

(nC) 5

Q

gd

(nC) 8

Configuration Single

N-Channel MOSFET

G

D

S

Thin-Lead TO-220 FULLPAK

S

D

G

ORDERING INFORMATION

Package Thin-lead TO-220 FULLPAK

Lead (Pb)-free and halogen-free SiHA6N80E-GE3

ABSOLUTE MAXIMUM RATINGS (T

C

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-source voltage V

DS

800

V

Gate-source voltage V

GS

± 30

Continuous drain current (T

J

= 150 °C)

e

V

GS

at 10 V

T

C

= 25 °C

I

D

5.4

AT

C

= 100 °C 3.4

Pulsed drain current

a

I

DM

15

Linear derating factor 0.25 W/°C

Single pulse avalanche energy

b

E

AS

95 mJ

Maximum power dissipation P

D

31 W

Operating junction and storage temperature range T

J

, T

stg

-55 to +150 °C

Drain-source voltage slope T

J

= 125 °C

dv/dt

70

V/ns

Reverse diode dv/dt

d

0.25

Soldering recommendations (peak temperature)

c

For 10 s 300 °C

Mounting torque M3 screw 0.6 Nm

SiHA6N80E

www.vishay.com

Vishay Siliconix

S17-1186-Rev. A, 31-Jul-17

2

Document Number: 92016

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. C

oss(er)

is a fixed capacitance that gives the same energy as C

oss

while V

DS

is rising from 0 V to 480 V V

DSS

b. C

oss(tr)

is a fixed capacitance that gives the same charging time as C

oss

while V

DS

is rising from 0 V to 480 V V

DSS

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum junction-to-ambient R

thJA

-65

°C/W

Maximum junction-to-case (drain) R

thJC

-4.0

SPECIFICATIONS (T

J

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-source breakdown voltage V

DS

V

GS

= 0 V, I

D

= 250 μA 800 - - V

V

DS

temperature coefficient

ΔV

DS

/T

J

Reference to 25 °C, I

D

= 1 mA

-1.1-

V/°C

Gate-source threshold Voltage (N) V

GS(th)

V

DS

= V

GS

, I

D

= 250 μA 2.0 - 4.0 V

Gate-source leakage I

GSS

V

GS

= ± 20 V - - ± 100 nA

V

GS

= ± 30 V - - ± 1 μA

Zero gate voltage drain current I

DSS

V

DS

= 800 V, V

GS

= 0 V - - 1

μA

V

DS

= 640 V, V

GS

= 0 V, T

J

= 125 °C - - 10

Drain-source on-state resistance R

DS(on)

V

GS

= 10 V I

D

= 3 A - 0.82 0.94 Ω

Forward transconductance g

fs

V

DS

= 30 V, I

D

= 3 A - 2.5 - S

Dynamic

Input capacitance C

iss

V

GS

= 0 V,

V

DS

= 100 V,

f = 1 MHz

- 827 -

pF

Output capacitance C

oss

-37-

Reverse transfer capacitance C

rss

-5-

Effective output capacitance, energy

C

o(er)

V

DS

= 0 V to 480 V, V

GS

= 0 V

-24-

Effective output capacitance, time

C

o(tr)

- 109 -

Total gate charge Q

g

V

GS

= 10 V I

D

= 3 A, V

DS

= 480 V

-2244

nC Gate-source charge Q

gs

-5-

Gate-drain charge Q

gd

-8-

Turn-on delay time t

d(on)

V

DD

= 480 V, I

D

= 3 A,

V

GS

= 10 V, R

g

= 9.1 Ω

-1326

ns

Rise time t

r

-918

Turn-off delay time t

d(off)

-2754

Fall time t

f

-1836

Gate input resistance R

g

f = 1 MHz, open drain 0.5 1.0 2.0 Ω

Drain-Source Body Diode Characteristics

Continuous source-drain diode current I

S

MOSFET symbol

showing the

integral reverse

p - n junction diode

--5.4

A

Pulsed diode forward current I

SM

--15

Diode forward voltage V

SD

T

J

= 25 °C, I

S

= 3 A, V

GS

= 0 V - - 1.2 V

Reverse recovery time t

rr

T

J

= 25 °C, I

F

= I

S

= 3 A,

di/dt = 100 A/μs, V

R

= 25 V

- 282 564 ns

Reverse recovery charge Q

rr

-2.04.0μC

Reverse recovery current I

RRM

-11-A

S

D

G

SiHA6N80E

www.vishay.com

Vishay Siliconix

S17-1186-Rev. A, 31-Jul-17

3

Document Number: 92016

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics

Fig. 2 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - C

oss

and E

oss

vs. V

DS

0

3

6

9

12

15

0 5 10 15 20

I

D

, Drain-to-Source Current (A)

V

DS

, Drain-to-Source Voltage (V)

T

J

= 25 °C

TOP 15 V

14 V

13 V

12 V

11 V

10 V

9 V

8 V

7 V

6 V

BOTTOM 5 V

0

2

4

6

8

0 5 10 15 20

I

D

, Drain-to-Source Current (A)

V

DS

, Drain-to-Source Voltage (V)

T

J

= 150 °C

TOP 15 V

14 V

13 V

12 V

11 V

10 V

9 V

8 V

7 V

6 V

BOTTOM 5 V

0

5

10

15

20

0 5 10 15 20

I

D

, Drain-to-Source Current (A)

V

GS

, Gate-to-Source Voltage (V)

T

J

= 150 °C

T

J

= 25 °C

V

DS

= 31 V

0

0.5

1.0

1.5

2.0

2.5

3.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

R

DS(on)

, Drain-to-Source On-Resistance

(Normalized)

T

J

, Junction Temperature (°C)

I

D

= 3 A

V

GS

= 10 V

1

10

100

1000

10 000

0 100 200 300 400 500 600

C, Capacitance (pF)

V

DS

, Drain-to-Source Voltage (V)

C

iss

C

oss

C

rss

V

GS

= 0 V, f = 1 MHz

C

iss

= C

gs

+ C

gd

, C

ds

shorted

C

rss

= C

gd

C

oss

= C

ds

+ C

gd

0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

10

100

1000

10 000

0 100 200 300 400 500 600

C

oss

E

oss

E

oss

, Output Capacitance Stored Energy (μJ)

C

oss

, Output Capacitance (pF)

V

DS

, Drain-to-Source Voltage (V)

SIHA6N80E-GE3

SIHA6N80E-GE3

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