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| PartNumber | SIHG120N60E-GE3 | SIHG11N80E-GE3 | SIHG100N60E-GE3 |
| Description | MOSFET 650V Vds; 30V Vgs TO-247AC | MOSFET 800V Vds 30V Vgs TO-247AC | MOSFET 650V Vds; 30V Vgs TO-247AC |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-247AC-3 | TO-247AC-3 | TO-247AC-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 800 V | 600 V |
| Id Continuous Drain Current | 25 A | 12 A | 30 A |
| Rds On Drain Source Resistance | 120 mOhms | 380 mOhms | 100 mOhms |
| Vgs th Gate Source Threshold Voltage | 3 V | 4 V | 3 V |
| Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
| Qg Gate Charge | 45 nC | 88 nC | 50 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 179 W | 179 W | 208 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Tube | - | Tube |
| Series | E | E | E |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 6 S | 4.5 S | 11 S |
| Fall Time | 33 ns | 18 ns | 20 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 65 ns | 15 ns | 34 ns |
| Factory Pack Quantity | 50 | - | 50 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 31 ns | 55 ns | 33 ns |
| Typical Turn On Delay Time | 19 ns | 18 ns | 21 ns |