OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

SIHG11N80E-GE3

SIHG11N80E-GE3
Mfr. #:
SIHG11N80E-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 800V Vds 30V Vgs TO-247AC
Lifecycle:
New from this manufacturer.
Datasheet:
SIHG11N80E-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHG11N80E-GE3 DatasheetSIHG11N80E-GE3 Datasheet (P4-P6)SIHG11N80E-GE3 Datasheet (P7)
ECAD Model:
More Information:
SIHG11N80E-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-247AC-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
800 V
Id - Continuous Drain Current:
12 A
Rds On - Drain-Source Resistance:
380 mOhms
Vgs th - Gate-Source Threshold Voltage:
4 V
Vgs - Gate-Source Voltage:
30 V
Qg - Gate Charge:
88 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
179 W
Configuration:
Single
Channel Mode:
Enhancement
Series:
E
Brand:
Vishay / Siliconix
Forward Transconductance - Min:
4.5 S
Fall Time:
18 ns
Product Type:
MOSFET
Rise Time:
15 ns
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
55 ns
Typical Turn-On Delay Time:
18 ns
Tags
SIHG1, SIHG, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 800V 12A 3-Pin(3+Tab) TO-247AC
***et Europe
Transistor MOSFET N-CH 800V 12A 3-Pin TO-247AC
***i-Key
MOSFET N-CH 800V 12A TO247AC
***ark
Mosfet, N-Ch, 800V, 12A, 150Deg C, 179W; Transistor Polarity:n Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:800V; On Resistance Rds(On):0.38Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 800V, 12A, 150DEG C, 179W; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.38ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:179W; Transistor Case Style:TO-247AC; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:E Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CANALE N, 800V, 12A, 150°C, 179W; Polarità Transistor:Canale N; Corrente Continua di Drain Id:12A; Tensione Drain Source Vds:800V; Resistenza di Attivazione Rds(on):0.38ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:179W; Modello Case Transistor:TO-247AC; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:E Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Part # Mfg. Description Stock Price
SIHG11N80E-GE3
DISTI # V99:2348_21688013		Vishay IntertechnologiesSIHG11N80E-GE3400
  • 2500:$1.9600
  • 1000:$2.0570
  • 500:$2.3020
  • 250:$2.6390
  • 100:$2.7210
  • 10:$3.3670
  • 1:$4.4363
SIHG11N80E-GE3
DISTI # SIHG11N80E-GE3-ND		Vishay SiliconixMOSFET N-CH 800V 12A TO247AC
RoHS: Compliant
Min Qty: 1
Container: Tube		500In Stock
  • 5000:$1.9811
  • 2500:$2.0584
  • 500:$2.5692
  • 100:$3.0180
  • 25:$3.4824
  • 10:$3.6840
  • 1:$4.1000
SIHG11N80E-GE3
DISTI # 31926983		Vishay IntertechnologiesSIHG11N80E-GE3400
  • 2500:$1.9600
  • 1000:$2.0570
  • 500:$2.3020
  • 250:$2.6390
  • 100:$2.7210
  • 10:$3.3670
  • 4:$4.4363
SIHG11N80E-GE3
DISTI # SIHG11N80E-GE3		Vishay IntertechnologiesTransistor MOSFET N-CH 800V 12A 3-Pin TO-247AC (Alt: SIHG11N80E-GE3)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€2.3900
  • 500:€2.4900
  • 50:€2.5900
  • 100:€2.5900
  • 25:€2.8900
  • 10:€3.4900
  • 1:€4.4900
SIHG11N80E-GE3
DISTI # 78AC6521		Vishay IntertechnologiesMOSFET, N-CH, 800V, 12A, 150DEG C, 179W,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:800V,On Resistance Rds(on):0.38ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes989
  • 500:$2.4600
  • 100:$2.8400
  • 50:$3.0400
  • 25:$3.2500
  • 10:$3.4500
  • 1:$4.1600
SIHG11N80E-GE3
DISTI # 78-SIHG11N80E-GE3		Vishay IntertechnologiesMOSFET 800V Vds 30V Vgs TO-247AC
RoHS: Compliant		508
  • 1:$4.1200
  • 10:$3.4200
  • 100:$2.8100
  • 250:$2.7200
  • 500:$2.4400
SIHG11N80E-GE3
DISTI # 2932926		Vishay IntertechnologiesMOSFET, N-CH, 800V, 12A, 150DEG C, 179W
RoHS: Compliant		989
  • 1000:$4.7000
  • 500:$4.9700
  • 250:$5.2700
  • 100:$5.7500
  • 10:$6.6300
  • 1:$7.6000
SIHG11N80E-GE3
DISTI # 2932926		Vishay IntertechnologiesMOSFET, N-CH, 800V, 12A, 150DEG C, 179W989
  • 500:£2.1000
  • 250:£2.1200
  • 100:£2.1800
  • 10:£2.6600
  • 1:£3.5900
Image Part # Description
SIHB11N80E-GE3

Mfr.#: SIHB11N80E-GE3

OMO.#: OMO-SIHB11N80E-GE3

 MOSFET 800V Vds 30V Vgs D2PAK (TO-263)
S8CM-M3/I

Mfr.#: S8CM-M3/I

OMO.#: OMO-S8CM-M3-I

 Rectifiers 8A, 1000V SMC
BYG23T-M3/TR

Mfr.#: BYG23T-M3/TR

OMO.#: OMO-BYG23T-M3-TR

 Rectifiers 1A 1300V High Volt Ultrafast
PMV55ENEAR

Mfr.#: PMV55ENEAR

OMO.#: OMO-PMV55ENEAR

 MOSFET PMV55ENEA/TO-236AB/REEL 7" Q3/
MUR460RLG

Mfr.#: MUR460RLG

OMO.#: OMO-MUR460RLG

 Rectifiers 600V 4A UltraFast
R6020KNZ1C9

Mfr.#: R6020KNZ1C9

OMO.#: OMO-R6020KNZ1C9

 MOSFET Nch 600V 20A Si MOSFET
FFSP05120A

Mfr.#: FFSP05120A

OMO.#: OMO-FFSP05120A

 Schottky Diodes & Rectifiers 1200V SiC SBD 5A
PMV55ENEAR

Mfr.#: PMV55ENEAR

OMO.#: OMO-PMV55ENEAR-NEXPERIA

 MOSFET N-CH 60V TO-236AB
R6020KNZ1C9

Mfr.#: R6020KNZ1C9

OMO.#: OMO-R6020KNZ1C9-ROHM-SEMI

 NCH 600V 20A POWER MOSFET
CRCW0603200RFKEAC

Mfr.#: CRCW0603200RFKEAC

OMO.#: OMO-CRCW0603200RFKEAC-VISHAY-DALE

 D11/CRCW0603-C 100 200R 1% ET1
Availability
Stock:
508
On Order:
2491
Enter Quantity:
Current price of SIHG11N80E-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$4.12
$4.12
10
$3.42
$34.20
100
$2.81
$281.00
250
$2.72
$680.00
500
$2.44
$1 220.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Start with
Newest Products
More Newest Products
Top