SIHG17N80E-GE3 vs SIHG17N60D-GE3 vs SIHG17N60D-E3

 
PartNumberSIHG17N80E-GE3SIHG17N60D-GE3SIHG17N60D-E3
DescriptionMOSFET 800V Vds 30V Vgs TO-247ACMOSFET 600V Vds 30V Vgs TO-247ACMOSFET 600V Vds 30V Vgs TO-247AC
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-247AC-3TO-247AC-3TO-247AC-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage300 V600 V600 V
Id Continuous Drain Current15 A17 A17 A
Rds On Drain Source Resistance250 mOhms340 mOhms340 mOhms
Vgs th Gate Source Threshold Voltage4 V5 V5 V
Vgs Gate Source Voltage30 V30 V30 V
Qg Gate Charge122 nC45 nC45 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation208 W277.8 W277.8 W
ConfigurationSingleSingleSingle
Channel ModeEnhancement--
PackagingTubeBulkBulk
SeriesEDD
Transistor Type1 N-Channel--
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Fall Time26 ns--
Product TypeMOSFETMOSFETMOSFET
Rise Time24 ns--
Factory Pack Quantity50500500
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time71 ns--
Typical Turn On Delay Time22 ns--
Unit Weight0.211644 oz1.340411 oz1.340411 oz
Part # Aliases-SIHG17N60D-E3SIHG17N60D
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