SIHG17N60D-GE3

Mfr. #:: SIHG17N60D-GE3
Manufacturer:: Vishay / Siliconix
Description:: MOSFET 600V Vds 30V Vgs TO-247AC
Lifecycle:: New from this manufacturer.
Datasheet:: SIHG17N60D-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SIHG17N60D-GE3 Datasheet SIHG17N60D-GE3 Datasheet (P4-P6)SIHG17N60D-GE3 Datasheet (P7-P8)
ECAD Model:
More Information:: SIHG17N60D-GE3 more Information

Product Attribute
Attribute Value

Manufacturer:: Vishay

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-247AC-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 600 V

Id - Continuous Drain Current:: 17 A

Rds On - Drain-Source Resistance:: 340 mOhms

Vgs th - Gate-Source Threshold Voltage:: 5 V

Vgs - Gate-Source Voltage:: 30 V

Qg - Gate Charge:: 45 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 277.8 W

Configuration:: Single

Packaging:: Bulk

Series:: D

Brand:: Vishay / Siliconix

Product Type:: MOSFET

Factory Pack Quantity:: 500

Subcategory:: MOSFETs

Part # Aliases:: SIHG17N60D-E3

Unit Weight:: 1.340411 oz

Tags: SIHG17, SIHG1, SIHG, SIH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIHG17N60D-GE3 Description

***ical: Trans MOSFET N-CH 600V 17A 3-Pin(3+Tab) TO-247AC

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 17A I(D), 600V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

***nell: MOSFET, N-CH, 600V, 17A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.275ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:277.8W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-247AC; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C

SIHG17N60D-GE3 More Information

D-Series High Voltage Power MOSFETs: Vishay Siliconix's D-Series High Voltage Power MOSFETs are Vishay's next-generation high voltage N-Channel MOSFETs available in 400V, 500V and 600V ratings. These new devices combines low specific on-resistance with ultra-low gate charge, currents from 3.0A to 36A and are available in a wide range of packages. Features include Vishay's new high-voltage stripe technology, on-resistance down to 0.13Ω, gate charge down to 6nC, best-in-class gate charge times on-resistant figures of merit (FOM) down to 7.65 Ω-nC, and avalanche rated for reliable operation. Typical applications include high-power, high-performance switch mode applications, including server and telecom power systems, welding, plasma cutting, battery chargers, ballast light, high-intensity discharge (HID) lighting, semiconductor capital equipment, and induction heating.

Market price

Part #	Mfg.	Description	Stock	Price
SIHG17N60D-GE3 DISTI # 27549478	Vishay Intertechnologies	Trans MOSFET N-CH 600V 17A 3-Pin(3+Tab) TO-247AC RoHS: Compliant	85	31:$2.5385
SIHG17N60D-GE3 DISTI # SIHG17N60D-GE3-ND	Vishay Siliconix	MOSFET N-CH 600V 17A TO247AC RoHS: Compliant Min Qty: 500 Container: Tube	Temporarily Out of Stock	500:$2.4665
SIHG17N60D-GE3 DISTI # SIHG17N60D-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 600V 17A 3-Pin TO-247AC (Alt: SIHG17N60D-GE3) RoHS: Compliant Min Qty: 1	Europe - 0	1000:€1.3900 50:€1.4900 100:€1.4900 500:€1.4900 25:€1.6900 10:€2.0900 1:€2.5900
SIHG17N60D-GE3 DISTI # SIHG17N60D-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 600V 17A 3-Pin TO-247AC - Tape and Reel (Alt: SIHG17N60D-GE3) RoHS: Not Compliant Min Qty: 500 Container: Reel	Americas - 0	3000:$1.7900 5000:$1.7900 1000:$1.8900 2000:$1.8900 500:$1.9900
SIHG17N60D-GE3 DISTI # 62W0514	Vishay Intertechnologies	Power MOSFET, N Channel, 17 A, 600 V, 0.275 ohm, 10 V, 3 V RoHS Compliant: Yes	85	1:$1.6500 10:$1.6500 25:$1.6500 50:$1.6500 100:$1.6500 500:$1.6500 1000:$1.6500 2500:$1.6500
SIHG17N60D-GE3 DISTI # 78-SIHG17N60D-GE3	Vishay Intertechnologies	MOSFET 600V Vds 30V Vgs TO-247AC RoHS: Compliant	277	1:$3.9700 10:$3.2900 100:$2.7100 250:$2.6200 500:$2.3500 1000:$1.9900 2500:$1.8900
SIHG17N60DGE3	Vishay Intertechnologies	Power Field-Effect Transistor, 17A I(D), 600V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC RoHS: Compliant	500
SIHG17N60D-GE3	Vishay Intertechnologies	MOSFET 600V Vds 30V Vgs TO-247AC RoHS: Compliant	Americas -

Related products

Image	Part #	Description
	Mfr.#: AMC1100DWVR OMO.#: OMO-AMC1100DWVR	Isolation Amplifiers 4.25kV peak Isolated Amplif Measr 8-SOIC
	Mfr.#: BTA24-600BWRG OMO.#: OMO-BTA24-600BWRG	Triacs 25 Amp 600 Volt
	Mfr.#: MMBT2907ALT1G OMO.#: OMO-MMBT2907ALT1G	Bipolar Transistors - BJT 600mA 60V PNP
	Mfr.#: MURS160T3G OMO.#: OMO-MURS160T3G	Rectifiers 600V 1A Ultrafast
	Mfr.#: IRF5210STRLPBF OMO.#: OMO-IRF5210STRLPBF	MOSFET MOSFT PCh -100V -0.4A 60mOhm 120nC
	Mfr.#: UCC28C43MDREP OMO.#: OMO-UCC28C43MDREP	AC/DC Converters Mil Enh BICMOS Low- pwr Cur-Mode PWM
	Mfr.#: RC0603FR-071KL OMO.#: OMO-RC0603FR-071KL	Thick Film Resistors - SMD 1K OHM 1%
	Mfr.#: AMC1100DWVR OMO.#: OMO-AMC1100DWVR-TEXAS-INSTRUMENTS	Isolation Amplifiers 4.25kV peak Isolated Amplif Measr 8-SOIC
	Mfr.#: AC0603KRX7R9BB102 OMO.#: OMO-AC0603KRX7R9BB102-YAGEO	Cap Ceramic 0.001uF 50V X7R 10% SMD 0603 125C Automotive
	Mfr.#: MURS160T3G OMO.#: OMO-MURS160T3G-ON-SEMICONDUCTOR	Rectifiers 600V 1A Ultrafast

Availability

Stock:: 277
On Order:: 2260
Enter Quantity:

Current price of SIHG17N60D-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$3.97~~; ~~$3.97~~

10: ~~$3.29~~; ~~$32.90~~

100: ~~$2.71~~; ~~$271.00~~

250: ~~$2.62~~; ~~$655.00~~

500: ~~$2.35~~; ~~$1 175.00~~

1000: ~~$1.99~~; ~~$1 990.00~~

2500: ~~$1.89~~; ~~$4 725.00~~

5000: ~~$1.82~~; ~~$9 100.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

Start with

SIHG17 3
SIHG1 12
SIHG 115
SIH 797

Newest Products

SIRA20DP TrenchFET® Gen IV MOSFET

Vishay Siliconix's SIRA20DP TrenchFET® Gen IV MOSFET provides the lowest maximum RDS(on) rating at VGS = 10 V.
TrenchFET® Power MOSFET Optimized for Standar

Vishay's 60 V TrenchFET® Gen IV n-channel power MOSFET is optimized for standard gate drives.
650 V Fast Body Diode MOSFETs

Vishay’s 650 V EF series of fast body diode MOSFETs provides a full complement to Vishay's standard E series components by delivering a 10 times lower Qrr.
Compare SIHG17N60D-GE3

SIHG17N60DE3 vs SIHG17N60DGE3 vs SIHG17N80EGE3
SiR626DP-T1-RE3 TrenchFET® Gen IV Power MOSFE

Vishay's SiR626DP-T1-RE3 N-Channel 60 V (D-S) TrenchFET® MOSFET features a very low RDS - Qg figure-of-merit (FOM).
Si7655DN -20 V P-Channel MOSFET

Vishay's MOSFET enables lower RDS(ON) while providing a slimmer profile and matching PCB pattern.

More Newest Products

SIHG17N60D-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes