SIHG17N60D-GE3 Datasheet SIHG17N60D-GE3, SIHG17N60D-E3 | P1-P3

SiHG17N60D

www.vishay.com

Vishay Siliconix

S12-0685-Rev. A, 02-Apr-12

1

Document Number: 91496

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

D Series Power MOSFET

FEATURES

•Optimal Design

- Low Area Specific On-Resistance

- Low Input Capacitance (C

iss

)

- Reduced Capacitive Switching Losses

- High Body Diode Ruggedness

- Avalanche Energy Rated (UIS)

• Optimal Efficiency and Operation

- Low Cost

- Simple Gate Drive Circuitry

- Low Figure-of-Merit (FOM): R

on

x Q

g

- Fast Switching

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

• Consumer Electronics

- Displays (LCD or Plasma TV)

•Lighting

• Industrial

- Welding

- Induction Heating

- Motor Drives

- Battery Chargers

•SMPS

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

b. V

DD

= 50 V, starting T

J

= 25 °C, L = 2.3 mH, R

g

= 25 , I

AS

= 12 A.

c. 1.6 mm from case.

d. I

SD

 I

D

, starting T

J

= 25 °C.

PRODUCT SUMMARY

V

DS

(V) at T

J

max. 650

R

DS(on)

max. at 25 °C ()V

GS

= 10 V 0.340

Q

g

(Max.) (nC) 90

Q

gs

(nC) 14

Q

gd

(nC) 22

Configuration Single

N-Channel MOSFET

G

D

S

TO-247AC

G

D

S

ORDERING INFORMATION

Package TO-247AC

Lead (Pb)-free

SiHG17N60D-E3

Lead (Pb)-free and Halogen-free

SiHG17N60D-GE3

ABSOLUTE MAXIMUM RATINGS (T

C

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

DS

600

V

Gate-Source Voltage V

GS

± 30

Continuous Drain Current (T

J

= 150 °C) V

GS

at 10 V

T

C

= 25 °C

I

D

17

AT

C

= 100 °C 10.7

Pulsed Drain Current

a

I

DM

48

Linear Derating Factor 2.22 W/°C

Single Pulse Avalanche Energy

b

E

AS

165.6 mJ

Maximum Power Dissipation P

D

277.8 W

Operating Junction and Storage Temperature Range T

J

, T

stg

- 55 to + 150 °C

Drain-Source Voltage Slope T

J

= 125 °C

dV/dt

24

V/ns

Reverse Diode dV/dt

d

0.2

Soldering Recommendations (Peak Temperature)

c

for 10 s 300 °C

SiHG17N60D

www.vishay.com

Vishay Siliconix

S12-0685-Rev. A, 02-Apr-12

2

Document Number: 91496

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Note

a. Repetitive rating; pulse width limited by maximum junction temperature.

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

thJA

-62

°C/W

Maximum Junction-to-Case (Drain) R

thJC

-0.45

SPECIFICATIONS (T

J

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

DS

V

GS

= 0 V, I

D

= 250 μA 600 - - V

V

DS

Temperature Coefficient V

DS

/T

J

Reference to 25 °C, I

D

= 1 mA - 0.7 - V/°C

Gate-Source Threshold Voltage (N) V

GS(th)

V

DS

= V

GS

, I

D

= 250 μA 3 - 5 V

Gate-Source Leakage I

GSS

V

GS

= ± 30 V - - ± 100 nA

Zero Gate Voltage Drain Current I

DSS

V

DS

= 600 V, V

GS

= 0 V - - 1

μA

V

DS

= 480 V, V

GS

= 0 V, T

J

= 125 °C - - 100

Drain-Source On-State Resistance R

DS(on)

V

GS

= 10 V I

D

= 8 A - 0.275 0.340 

Forward Transconductance

a

g

fs

V

DS

= 50 V, I

D

= 8 A - 6.2 - S

Dynamic

Input Capacitance C

iss

V

GS

= 0 V,

V

DS

= 100 V,

f = 1 MHz

- 1780 -

pFOutput Capacitance C

oss

- 140 -

Reverse Transfer Capacitance C

rss

-15-

Total Gate Charge Q

g

V

GS

= 10 V I

D

= 8 A, V

DS

= 480 V

-4590

nC Gate-Source Charge Q

gs

-14-

Gate-Drain Charge Q

gd

-22-

Turn-On Delay Time t

d(on)

V

DD

= 300 V, I

D

= 8 A

R

g

= 9.1 , V

GS

= 10 V

-2245

ns

Rise Time t

r

-5685

Turn-Off Delay Time t

d(off)

-3775

Fall Time t

f

-3060

Internal Gate Resistance R

g

f = 1 MHz, open drain - 1.6 - 

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

S

MOSFET symbol

showing the

integral reverse

p - n junction diode

--17

A

Pulsed Diode Forward Current I

SM

--48

Body Diode Voltage V

SD

T

J

= 25 °C, I

S

= 8 A, V

GS

= 0 V - - 1.5 V

Body Diode Reverse Recovery Time t

rr

T

J

= 25 °C, I

F

= I

S

,

dI/dt = 100 A/μs, V

R

= 20 V

- 633 950 ns

Body Diode Reverse Recovery Charge Q

rr

- 7 15 μC

Reverse Recovery Current I

RRM

-2142A

S

D

G

SiHG17N60D

www.vishay.com

Vishay Siliconix

S12-0685-Rev. A, 02-Apr-12

3

Document Number: 91496

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics, T

C

= 150 °C

Fig. 2 - Typical Output Characteristics, T

C

= 150 °C

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

0

10

20

30

40

50

0 5 10 15 20 25 30

I

D

- Drain Current (A)

V

DS

-Drain-to-Source Voltage (V)

TOP 15V

14V

13V

12V

11V

10V

9.0V

8.0V

7.0V

6.0V

BOTYTOM 5.0

7 V

T

J

= 25ɗ

0

6

12

18

24

30

0 5 10 15 20 25 30

I

D

- Drain Current (A)

V

DS

-Drain-to-Source Voltage (V)

TOP 15V

14V

13V

12V

11V

10V

9.0V

8.0V

7.0V

6.0V

BOTYTOM 5.0V

7V

T

J

= 150ɗ

10

20

30

40

50

60

0 5 10 15 20 25

I

D

,Drain- to-Source Current (A)

V

GS

,

Gate-to-Source Voltage (V)

0

T

J

= 150 °C

T

J

= 25 °C

0.0

0.5

1.0

1.5

2.0

2.5

3.0

- 60 - 40 - 20 0 20 40 60 80 100 120 140 160

R

DS(on)

-On-Resistance

(Normalized)

T

J

- Junction Temperature (°C)

I

D

= 10 A

V

GS

= 10 V

10

100

1000

10000

0 200 400 600

C - Capacitance (pF)

V

DS

-Drain-to-Source Voltage (V)

C

iss

C

oss

C

rss

0

2

4

6

8

10

12

14

16

18

20

0.0 20.0 40.0 60.0 80.0

V

GS

- Gate-to-Source Voltage (V)

Q

g

-Total Gate Charge (nC)

V

DS

= 480 V

V

DS

= 300 V

V

DS

=120 V

I

D

= 12 A

SIHG17N60D-GE3

SIHG17N60D-GE3

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