SIHG30N60E-E3 vs SIHG30N60AEL-GE3 vs SIHG30N60E

 
PartNumberSIHG30N60E-E3SIHG30N60AEL-GE3SIHG30N60E
DescriptionMOSFET 600V Vds 30V Vgs TO-247ACMOSFET RECOMMENDED ALT 78-SIHG120N60E-GE3
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-247AC-3TO-247AC-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage600 V600 V-
Id Continuous Drain Current29 A28 A-
Rds On Drain Source Resistance125 mOhms120 mOhms-
Vgs th Gate Source Threshold Voltage4 V2 V-
Vgs Gate Source Voltage30 V30 V-
Qg Gate Charge85 nC120 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation250 W250 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingTube--
SeriesEEL-
BrandVishay / SiliconixVishay / Siliconix-
Fall Time36 ns33 ns-
Product TypeMOSFETMOSFET-
Rise Time32 ns24 ns-
Factory Pack Quantity5001-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time63 ns79 ns-
Typical Turn On Delay Time19 ns26 ns-
Unit Weight1.340411 oz--
Forward Transconductance Min-19 S-
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