SIHG30N60E-E3

Mfr. #:: SIHG30N60E-E3
Manufacturer:: Vishay / Siliconix
Description:: MOSFET 600V Vds 30V Vgs TO-247AC
Lifecycle:: New from this manufacturer.
Datasheet:: SIHG30N60E-E3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SIHG30N60E-E3 Datasheet SIHG30N60E-E3 Datasheet (P4-P6)SIHG30N60E-E3 Datasheet (P7-P8)
ECAD Model:
More Information:: SIHG30N60E-E3 more Information

Product Attribute
Attribute Value

Manufacturer:: Vishay

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-247AC-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 600 V

Id - Continuous Drain Current:: 29 A

Rds On - Drain-Source Resistance:: 125 mOhms

Vgs th - Gate-Source Threshold Voltage:: 4 V

Vgs - Gate-Source Voltage:: 30 V

Qg - Gate Charge:: 85 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 250 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Tube

Series:: E

Brand:: Vishay / Siliconix

Fall Time:: 36 ns

Product Type:: MOSFET

Rise Time:: 32 ns

Factory Pack Quantity:: 500

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 63 ns

Typical Turn-On Delay Time:: 19 ns

Unit Weight:: 1.340411 oz

Tags: SIHG30N60E, SIHG30, SIHG3, SIHG, SIH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIHG30N60E-E3 Description

***ark: MOSFET, N CH, 600V, 29A, TO-247AC; Transistor Polarity:N Channel; Continuous Dra

***ure Electronics: E-Series N-Channel 600 V 0.125 O 130 nC Flange Mount Power Mosfet - TO-247AC

***et: Trans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-247AC

***o-Tech: MOSFET N-Channel 600V 29A TO247AC

***nell: MOSFET, N CH, 600V, 29A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.104ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:250W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-247AC; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V

SIHG30N60E-E3 More Information

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

E Series High Voltage MOSFETs: Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Market price

Part #	Mfg.	Description	Stock	Price
SIHG30N60E-E3 DISTI # SIHG30N60E-E3-ND	Vishay Siliconix	MOSFET N-CH 600V 29A TO247AC Min Qty: 1 Container: Tube	499In Stock	100:$4.4850 25:$5.1752 10:$5.4740 1:$6.1000
SIHG30N60E-E3 DISTI # SIHG30N60E-E3	Vishay Intertechnologies	Trans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-247AC - Rail/Tube (Alt: SIHG30N60E-E3) RoHS: Not Compliant Min Qty: 500 Container: Tube	Americas - 0	5000:$2.8900 3000:$2.9900 2000:$3.0900 1000:$3.1900 500:$3.2900
SIHG30N60E-E3 DISTI # 781-SIHG30N60E-E3	Vishay Intertechnologies	MOSFET 600V Vds 30V Vgs TO-247AC RoHS: Compliant	327	1:$6.4400 10:$5.3300 100:$4.3900 250:$4.2500 500:$4.1900 1000:$3.5900 2500:$3.0500
SIHG30N60E-GE3 DISTI # 78-SIHG30N60E-GE3	Vishay Intertechnologies	MOSFET 600V Vds 30V Vgs TO-247AC RoHS: Compliant	25	1:$6.4400 10:$5.3300 100:$4.3900 250:$4.2500
SIHG30N60E-E3	Vishay Intertechnologies		100

Related products

Image	Part #	Description
	Mfr.#: TL103WIDR OMO.#: OMO-TL103WIDR	Operational Amplifiers - Op Amps Dual OpAmp w/Internal Reference
	Mfr.#: IR2110PBF OMO.#: OMO-IR2110PBF	Gate Drivers Hi&Lw Sd Drvr All HiVlt Pins 1 Sd
	Mfr.#: 1N4148WS OMO.#: OMO-1N4148WS	Diodes - General Purpose, Power, Switching Small Signal Diode
	Mfr.#: HCPL-2502-000E OMO.#: OMO-HCPL-2502-000E	High Speed Optocouplers 1MBd 1Ch 25mA
	Mfr.#: STF22NM60N OMO.#: OMO-STF22NM60N	MOSFET N-channel 600 V 0.190 16A MDmesh
	Mfr.#: 4N35 OMO.#: OMO-4N35	Transistor Output Optocouplers Phototransistor Out
	Mfr.#: IXFH26N50P OMO.#: OMO-IXFH26N50P	MOSFET HiPERFET Id26 BVdass500
	Mfr.#: IR2110PBF OMO.#: OMO-IR2110PBF-INFINEON-TECHNOLOGIES	Gate Drivers Hi&Lw Sd Drvr All HiVlt Pins 1 Sd
	Mfr.#: HCPL-2502-000E OMO.#: OMO-HCPL-2502-000E-BROADCOM	High Speed Optocouplers 1MBd 1Ch 25mA
	Mfr.#: TL103WIDR OMO.#: OMO-TL103WIDR-TEXAS-INSTRUMENTS	Operational Amplifiers - Op Amps Dual OpAmp w/Internal Reference

Availability

Stock:: 327
On Order:: 2310
Enter Quantity:

Current price of SIHG30N60E-E3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$6.44~~; ~~$6.44~~

10: ~~$5.33~~; ~~$53.30~~

100: ~~$4.39~~; ~~$439.00~~

250: ~~$4.25~~; ~~$1 062.50~~

500: ~~$4.19~~; ~~$2 095.00~~

1000: ~~$3.59~~; ~~$3 590.00~~

2500: ~~$3.05~~; ~~$7 625.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

Start with

SIHG30N60E 4
SIHG30 5
SIHG3 18
SIHG 115
SIH 797

Newest Products

SIRA20DP TrenchFET® Gen IV MOSFET

Vishay Siliconix's SIRA20DP TrenchFET® Gen IV MOSFET provides the lowest maximum RDS(on) rating at VGS = 10 V.
TrenchFET® Power MOSFET Optimized for Standar

Vishay's 60 V TrenchFET® Gen IV n-channel power MOSFET is optimized for standard gate drives.
650 V Fast Body Diode MOSFETs

Vishay’s 650 V EF series of fast body diode MOSFETs provides a full complement to Vishay's standard E series components by delivering a 10 times lower Qrr.
SiR626DP-T1-RE3 TrenchFET® Gen IV Power MOSFE

Vishay's SiR626DP-T1-RE3 N-Channel 60 V (D-S) TrenchFET® MOSFET features a very low RDS - Qg figure-of-merit (FOM).
Compare SIHG30N60E-E3

SIHG30N60E vs SIHG30N60EE3 vs SIHG30N60EGE3
Si7655DN -20 V P-Channel MOSFET

Vishay's MOSFET enables lower RDS(ON) while providing a slimmer profile and matching PCB pattern.

More Newest Products

SIHG30N60E-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes