SIHJ10N60E-T1-GE3 vs SIHJ240N60E-T1-GE3 vs SIHJ690N60E-T1-GE3

 
PartNumberSIHJ10N60E-T1-GE3SIHJ240N60E-T1-GE3SIHJ690N60E-T1-GE3
DescriptionMOSFET 600V Vds 30V Vgs PowerPAK SO-8LMOSFET 600V Vds; +/-30V Vgs PowerPAK SO-8LMOSFET E Series Power MOSFET
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePowerPAK-SO-8L-4PowerPAK SO-8PowerPAK-SO-8L
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage600 V600 V600 V
Id Continuous Drain Current10 A12 A5.6 A
Rds On Drain Source Resistance313 mOhms240 mOhms600 mOhms
Vgs th Gate Source Threshold Voltage4.5 V3 V5 V
Vgs Gate Source Voltage30 V30 V30 V
Qg Gate Charge25 nC23 nC8 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation89 W89 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancementEnhancement
PackagingReelReelReel
SeriesEEE
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Fall Time13 ns14 ns22 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time24 ns14 ns9 ns
Factory Pack Quantity300030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time31 ns26 ns19 ns
Typical Turn On Delay Time16 ns15 ns12 ns
Unit Weight0.017870 oz--
Transistor Type-1 N-Channel-
Forward Transconductance Min-4 S-
Tradename--TrenchFET
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