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SIHJ10N60E-T1-GE3

SIHJ10N60E-T1-GE3
Mfr. #:
SIHJ10N60E-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 600V Vds 30V Vgs PowerPAK SO-8L
Lifecycle:
New from this manufacturer.
Datasheet:
SIHJ10N60E-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHJ10N60E-T1-GE3 DatasheetSIHJ10N60E-T1-GE3 Datasheet (P4-P6)SIHJ10N60E-T1-GE3 Datasheet (P7-P9)
ECAD Model:
More Information:
SIHJ10N60E-T1-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
PowerPAK-SO-8L-4
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
10 A
Rds On - Drain-Source Resistance:
313 mOhms
Vgs th - Gate-Source Threshold Voltage:
4.5 V
Vgs - Gate-Source Voltage:
30 V
Qg - Gate Charge:
25 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
89 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Reel
Series:
E
Brand:
Vishay / Siliconix
Fall Time:
13 ns
Product Type:
MOSFET
Rise Time:
24 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
31 ns
Typical Turn-On Delay Time:
16 ns
Unit Weight:
0.017870 oz
Tags
SIHJ, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Transistor MOSFET N-CH 600V 10A 8-Pin PowerPAK SO T/R
***ure Electronics
600Volt, 10Amp, 360mohm, PPAKSO-8
***ark
Mosfet, N-Ch, 600V, 10A, Powerpak So; Transistor Polarity:n Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.313Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Rohs Compliant: Yes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Part # Mfg. Description Stock Price
SIHJ10N60E-T1-GE3
DISTI # V72:2272_17600390		Vishay IntertechnologiesSIHJ10N60E-T1-GE3**MULT1
9172
3106950		2705
  • 1000:$1.3580
  • 500:$1.6170
  • 250:$1.8610
  • 100:$1.8720
  • 50:$2.2780
  • 25:$2.4120
  • 10:$2.4140
  • 1:$3.1823
SIHJ10N60E-T1-GE3
DISTI # SIHJ10N60E-T1-GE3-ND		Vishay SiliconixMOSFET N-CH 600V 10A POWERPAKSO
RoHS: Compliant
Min Qty: 1
Container: Tube		1709In Stock
  • 6000:$1.2886
  • 3000:$1.3381
  • 500:$1.7346
  • 100:$2.1113
  • 25:$2.4780
  • 10:$2.6270
  • 1:$2.9200
SIHJ10N60E-T1-GE3
DISTI # 29528986		Vishay IntertechnologiesSIHJ10N60E-T1-GE3**MULT1
9172
3106950		2705
  • 6:$3.1823
SIHJ10N60E-T1-GE3
DISTI # SIHJ10N60E-T1-GE3		Vishay IntertechnologiesPower MOSFET N-Channel 600V 10A 4-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIHJ10N60E-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 12000:$1.1900
  • 18000:$1.1900
  • 30000:$1.1900
  • 3000:$1.2900
  • 6000:$1.2900
SIHJ10N60E-T1-GE3
DISTI # SIHJ10N60E-T1-GE3		Vishay IntertechnologiesTransistor MOSFET N-CH 600V 10A 8-Pin PowerPAK SO T/R (Alt: SIHJ10N60E-T1-GE3)
RoHS: Compliant
Min Qty: 1
Container: Tape and Reel		Europe - 0
  • 500:€1.1900
  • 1000:€1.1900
  • 50:€1.2900
  • 100:€1.2900
  • 25:€1.4900
  • 10:€1.7900
  • 1:€2.5900
SIHJ10N60E-T1-GE3
DISTI # 20AC3838		Vishay IntertechnologiesN-CHANNEL 600V0
  • 10000:$1.1800
  • 6000:$1.2300
  • 4000:$1.2800
  • 2000:$1.4200
  • 1000:$1.5000
  • 1:$1.5900
SIHJ10N60E-T1-GE3
DISTI # 78-SIHJ10N60E-T1-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs PowerPAK SO-8L
RoHS: Compliant		3336
  • 1:$2.9300
  • 10:$2.4300
  • 100:$1.8800
  • 500:$1.6500
  • 1000:$1.3600
  • 3000:$1.2700
  • 6000:$1.2200
SIHJ10N60E-T1-GE3
DISTI # 2708303		Vishay IntertechnologiesMOSFET, N-CH, 600V, 10A, POWERPAK SO2910
  • 500:£1.1400
  • 250:£1.2200
  • 100:£1.3000
  • 10:£1.6700
  • 1:£2.2900
SIHJ10N60E-T1-GE3
DISTI # 2708303		Vishay IntertechnologiesMOSFET, N-CH, 600V, 10A, POWERPAK SO
RoHS: Compliant		2920
  • 6000:$2.0000
  • 3000:$2.0200
  • 500:$2.6200
  • 100:$3.1900
  • 25:$3.7400
  • 10:$3.9600
  • 1:$4.4000
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Availability
Stock:
Available
On Order:
1986
Enter Quantity:
Current price of SIHJ10N60E-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$2.93
$2.93
10
$2.43
$24.30
100
$1.88
$188.00
500
$1.65
$825.00
1000
$1.36
$1 360.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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