SIHP30N60AEL-GE3 vs SIHP30N60E-E3 vs SIHP30N60E

 
PartNumberSIHP30N60AEL-GE3SIHP30N60E-E3SIHP30N60E
DescriptionMOSFET 600V Vds 30V Vgs TO-220ABMOSFET 600V Vds 30V Vgs TO-220AB
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220AB-3TO-220AB-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage600 V600 V-
Id Continuous Drain Current28 A29 A-
Rds On Drain Source Resistance120 mOhms125 mOhms-
Vgs th Gate Source Threshold Voltage2 V2.8 V-
Vgs Gate Source Voltage30 V30 V-
Qg Gate Charge120 nC85 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation250 W250 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
SeriesELE-
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min19 S--
Fall Time33 ns36 ns-
Product TypeMOSFETMOSFET-
Rise Time24 ns32 ns-
Factory Pack Quantity150-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time79 ns63 ns-
Typical Turn On Delay Time26 ns19 ns-
Packaging-Tube-
Height-15.49 mm-
Length-10.41 mm-
Width-4.7 mm-
Unit Weight-0.211644 oz-
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