SIHP30N60E-E3

Mfr. #:: SIHP30N60E-E3
Manufacturer:: Vishay / Siliconix
Description:: MOSFET 600V Vds 30V Vgs TO-220AB
Lifecycle:: New from this manufacturer.
Datasheet:: SIHP30N60E-E3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SIHP30N60E-E3 Datasheet SIHP30N60E-E3 Datasheet (P4-P6)SIHP30N60E-E3 Datasheet (P7-P8)
ECAD Model:
More Information:: SIHP30N60E-E3 more Information

Product Attribute
Attribute Value

Manufacturer:: Vishay

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-220AB-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 600 V

Id - Continuous Drain Current:: 29 A

Rds On - Drain-Source Resistance:: 125 mOhms

Vgs th - Gate-Source Threshold Voltage:: 2.8 V

Vgs - Gate-Source Voltage:: 30 V

Qg - Gate Charge:: 85 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 250 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Tube

Height:: 15.49 mm

Length:: 10.41 mm

Series:: E

Width:: 4.7 mm

Brand:: Vishay / Siliconix

Fall Time:: 36 ns

Product Type:: MOSFET

Rise Time:: 32 ns

Factory Pack Quantity:: 50

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 63 ns

Typical Turn-On Delay Time:: 19 ns

Unit Weight:: 0.211644 oz

Tags: SIHP30N60E, SIHP30, SIHP3, SIHP, SIH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIHP30N60E-E3 Description

***ark: MOSFET, N CH, 600V, 29A, TO-220AB; Transistor Polarity:N Channel; Continuous Dra

***ow.cn: SIHP30N60E-E3 Vishay MOSFETs Transistor N-CH 600V 29A 3-Pin(3+Tab) TO-220AB - Arrow.com

***ure Electronics: E-Series N-Channel 600 V 0.125 O 130 nC Flange Mount Power Mosfet- TO-220AB

***et: Trans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-220AB

***nell: MOSFET, N CH, 600V, 29A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.104ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:250W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220AB; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V

SIHP30N60E-E3 More Information

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

E Series High Voltage MOSFETs: Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Market price

Part #	Mfg.	Description	Stock	Price
SIHP30N60E-E3 DISTI # V99:2348_09218745	Vishay Intertechnologies	Trans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-220AB RoHS: Compliant	1000	3000:$2.8590 1000:$2.9580 100:$4.2560 25:$4.3330 10:$4.8140 1:$6.5274
SIHP30N60E-E3 DISTI # V36:1790_09218745	Vishay Intertechnologies	Trans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-220AB RoHS: Compliant	0
SIHP30N60E-E3 DISTI # SIHP30N60E-E3-ND	Vishay Siliconix	MOSFET N-CH 600V 29A TO220AB RoHS: Compliant Min Qty: 1 Container: Tube	976In Stock	3000:$3.0100 1000:$3.1605 100:$4.4021 25:$5.0792 10:$5.3730 1:$5.9800
SIHP30N60E-E3 DISTI # 28977885	Vishay Intertechnologies	Trans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-220AB RoHS: Compliant	1000	1000:$3.2313 500:$3.8281 100:$4.7203 10:$5.1750 3:$7.0749
SIHP30N60E-E3 DISTI # SIHP30N60E-E3	Vishay Intertechnologies	Trans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: SIHP30N60E-E3) RoHS: Not Compliant Min Qty: 1000 Container: Tube	Americas - 0	10000:$2.6900 6000:$2.7900 4000:$2.8900 2000:$2.9900 1000:$3.0900
SIHP30N60E-GE3 DISTI # 78-SIHP30N60E-GE3	Vishay Intertechnologies	MOSFET 600V Vds 30V Vgs TO-220AB RoHS: Compliant	857	1:$6.0200 10:$4.9800 100:$4.1000 250:$3.9700
SIHP30N60E-E3 DISTI # 781-SIHP30N60E-E3	Vishay Intertechnologies	MOSFET 600V Vds 30V Vgs TO-220AB RoHS: Compliant	0	1000:$3.0000
SIHP30N60E-GE3	Vishay Intertechnologies	MOSFET 600V Vds 30V Vgs TO-220AB RoHS: Compliant	Americas -

Related products

Image	Part #	Description
	Mfr.#: SIHP30N60AEL-GE3 OMO.#: OMO-SIHP30N60AEL-GE3	MOSFET 600V Vds 30V Vgs TO-220AB
	Mfr.#: SIHP30N60E-GE3 OMO.#: OMO-SIHP30N60E-GE3	MOSFET 600V Vds 30V Vgs TO-220AB
	Mfr.#: SIHP30N60E-E3 OMO.#: OMO-SIHP30N60E-E3	MOSFET 600V Vds 30V Vgs TO-220AB
	Mfr.#: SIHP30N60E-GE3 OMO.#: OMO-SIHP30N60E-GE3-VISHAY	IGBT Transistors MOSFET 600V 125mOhm@10V 29A N-Ch E-SRS
	Mfr.#: SIHP30N60AEL-GE3 OMO.#: OMO-SIHP30N60AEL-GE3-VISHAY	MOSFET N-CHAN 600V TO-220AB
	Mfr.#: SIHP30N60E-E3 OMO.#: OMO-SIHP30N60E-E3-VISHAY	MOSFET N-CH 600V 29A TO220AB
	Mfr.#: SIHP30N60E OMO.#: OMO-SIHP30N60E-1190	New and Original
	Mfr.#: SIHP30N60E-GE3,SIHP30N60 OMO.#: OMO-SIHP30N60E-GE3-SIHP30N60-1190	New and Original
	Mfr.#: SIHP30N60E-GE3,SIHP30N60E, OMO.#: OMO-SIHP30N60E-GE3-SIHP30N60E--1190	New and Original
	Mfr.#: SIHP30N60EGE3 OMO.#: OMO-SIHP30N60EGE3-1190	Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Availability

Stock:: Available
On Order:: 3000
Enter Quantity:

Current price of SIHP30N60E-E3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1000: ~~$3.00~~; ~~$3 000.00~~

3000: ~~$2.85~~; ~~$8 550.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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SIHP30N60E-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes