 | | | |
| PartNumber | SIHP30N60AEL-GE3 | SIHP30N60E-GE3 | SIHP30N60E-E3 |
| Description | MOSFET 600V Vds 30V Vgs TO-220AB | MOSFET 600V Vds 30V Vgs TO-220AB | MOSFET 600V Vds 30V Vgs TO-220AB |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220AB-3 | TO-220AB-3 | TO-220AB-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | 600 V |
| Id Continuous Drain Current | 28 A | 29 A | 29 A |
| Rds On Drain Source Resistance | 120 mOhms | 125 mOhms | 125 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 2.8 V | 2.8 V |
| Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
| Qg Gate Charge | 120 nC | 85 nC | 85 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 250 W | 250 W | 250 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Series | EL | E | E |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 19 S | - | - |
| Fall Time | 33 ns | 36 ns | 36 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 24 ns | 32 ns | 32 ns |
| Factory Pack Quantity | 1 | 50 | 50 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 79 ns | 63 ns | 63 ns |
| Typical Turn On Delay Time | 26 ns | 19 ns | 19 ns |
| Packaging | - | Tube | Tube |
| Height | - | 15.49 mm | 15.49 mm |
| Length | - | 10.41 mm | 10.41 mm |
| Width | - | 4.7 mm | 4.7 mm |
| Unit Weight | - | 0.211644 oz | 0.211644 oz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHP35N60EF-GE3 | MOSFET 600V Vds 30V Vgs TO-220AB | |
| SIHP38N60EF-GE3 | MOSFET 600V Vds 30V Vgs TO-220AB | ||
| SIHP30N60AEL-GE3 | MOSFET 600V Vds 30V Vgs TO-220AB | ||
| SIHP38N60E-GE3 | MOSFET 600V Vds 30V Vgs TO-220AB | ||
| SIHP30N60E-GE3 | MOSFET 600V Vds 30V Vgs TO-220AB | ||
| SIHP33N60E-GE3 | MOSFET 600V Vds 30V Vgs TO-220AB | ||
| SIHP33N60EF-GE3 | MOSFET 600V Vds 30V Vgs TO-220AB | ||
| SIHP35N60E-GE3 | MOSFET 600V Vds 30V Vgs TO-220AB | ||
| SIHP30N60E-E3 | MOSFET 600V Vds 30V Vgs TO-220AB | ||
Vishay |
SIHP33N60EF-GE3 | Darlington Transistors MOSFET 600V 98mOhms@10V 33A N-Ch MOSFET | |
| SIHP30N60E-GE3 | IGBT Transistors MOSFET 600V 125mOhm@10V 29A N-Ch E-SRS | ||
| SIHP30N60AEL-GE3 | MOSFET N-CHAN 600V TO-220AB | ||
| SIHP30N60E-E3 | MOSFET N-CH 600V 29A TO220AB | ||
| SIHP33N60E-GE3 | MOSFET N-CH 600V 33A TO-220AB | ||
| SIHP35N60E-GE3 | Power MOSFET | ||
| SIHP35N60EF-GE3 | EF Series Power MOSFET With Fast Body Diode TO-220AB, 97 m @ 10V | ||
| SIHP38N60E-GE3 | Power MOSFET | ||
| SIHP30N60E | New and Original | ||
| SIHP30N60E-GE3,SIHP30N60 | New and Original | ||
| SIHP30N60E-GE3,SIHP30N60E, | New and Original | ||
| SIHP30N60EGE3 | Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| SIHP33N60E | New and Original |