 | |  | |
| PartNumber | SISH108DN-T1-GE3 | SISH106DN-T1-GE3 | SISH101DN-T1-GE3 |
| Description | MOSFET 20V Vds; 20/-16V Vgs PowerPAK 1212-8SH | MOSFET 20V Vds; +/-12V Vgs PowerPAK 1212-8SH | MOSFET -30V Vds; +/-25V Vgs PowerPAK 1212-8SH |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-1212-8 | PowerPAK1212-8 | PowerPAK-1212-8SH-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 20 V | 20 V | 30 V |
| Id Continuous Drain Current | 22 A | 19.5 A | - 35 A |
| Rds On Drain Source Resistance | 4.9 mOhms | 6.2 mOhms | 7.2 mOhms |
| Vgs th Gate Source Threshold Voltage | 1 V | 600 mV | - 1.2 V |
| Vgs Gate Source Voltage | 16 V | 12 V | 25 V |
| Qg Gate Charge | 30 nC | 27 nC | 102 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 3.8 W | 3.8 W | 52 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Reel |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 P-Channel |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 88 S | 105 S | 44 S |
| Fall Time | 10 ns | 12 ns | 8 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 10 ns | 15 ns | 10 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 60 ns | 50 ns | 38 ns |
| Typical Turn On Delay Time | 10 ns | 25 ns | 12 ns |
| Tradename | - | TrenchFET, PowerPAK | TrenchFET; PowerPAK |
| Series | - | SIS | - |