SISH108DN-T1-GE3

Mfr. #:: SISH108DN-T1-GE3
Manufacturer:: Vishay / Siliconix
Description:: MOSFET 20V Vds; 20/-16V Vgs PowerPAK 1212-8SH
Lifecycle:: New from this manufacturer.
Datasheet:: SISH108DN-T1-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: SISH108DN-T1-GE3 more Information

Product Attribute
Attribute Value

Manufacturer:: Vishay

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: PowerPAK-1212-8

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 20 V

Id - Continuous Drain Current:: 22 A

Rds On - Drain-Source Resistance:: 4.9 mOhms

Vgs th - Gate-Source Threshold Voltage:: 1 V

Vgs - Gate-Source Voltage:: 16 V

Qg - Gate Charge:: 30 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 3.8 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Reel

Transistor Type:: 1 N-Channel

Brand:: Vishay / Siliconix

Forward Transconductance - Min:: 88 S

Fall Time:: 10 ns

Product Type:: MOSFET

Rise Time:: 10 ns

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 60 ns

Typical Turn-On Delay Time:: 10 ns

Tags: SISH10, SISH1, SISH, SIS

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SISH108DN-T1-GE3 More Information

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

TrenchFET Gen IV MOSFETs: Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.

Market price

Part #	Mfg.	Description	Stock	Price
SISH108DN-T1-GE3 DISTI # V99:2348_22831165	Vishay Intertechnologies	SISH108DN-T1-GE3	6000	3000:$0.2024 1000:$0.2249 500:$0.2869 100:$0.3855 10:$0.5574 1:$0.6578
SISH108DN-T1-GE3 DISTI # SISH108DN-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CHAN 20 V POWERPAK 1212 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	6050In Stock	1000:$0.2046 500:$0.2648 100:$0.3370 10:$0.4510 1:$0.5300
SISH108DN-T1-GE3 DISTI # SISH108DN-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CHAN 20 V POWERPAK 1212 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	6050In Stock	1000:$0.2046 500:$0.2648 100:$0.3370 10:$0.4510 1:$0.5300
SISH108DN-T1-GE3 DISTI # SISH108DN-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CHAN 20 V POWERPAK 1212 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	6000In Stock	30000:$0.1558 15000:$0.1578 6000:$0.1695 3000:$0.1811
SISH108DN-T1-GE3 DISTI # 33140901	Vishay Intertechnologies	SISH108DN-T1-GE3	6000	24000:$0.1480 9000:$0.1639 6000:$0.1821 3000:$0.2024 1000:$0.2249 500:$0.2869 100:$0.3855 45:$0.5574
SISH108DN-T1-GE3 DISTI # 99AC9580	Vishay Intertechnologies	MOSFET, N-CH, 20V, 14A, 150DEG C, 1.5W,Transistor Polarity:N Channel,Continuous Drain Current Id:14A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.0041ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power RoHS Compliant: Yes	50	1000:$0.2910 500:$0.3640 250:$0.4020 100:$0.4400 50:$0.4870 25:$0.5340 10:$0.5810 1:$0.7170
SISH108DN-T1-GE3 DISTI # 78-SISH108DN-T1-GE3	Vishay Intertechnologies	MOSFET 20V Vds,20/-16V Vgs PowerPAK 1212-8SH RoHS: Compliant	5890	1:$0.7100 10:$0.5740 100:$0.4350 500:$0.3600 1000:$0.2880 3000:$0.2600 6000:$0.2430 9000:$0.2340 24000:$0.2250
SISH108DN-T1-GE3	Vishay Intertechnologies	MOSFET 20V Vds,20/-16V Vgs PowerPAK 1212-8SH	Americas -
SISH108DN-T1-GE3 DISTI # 3019126	Vishay Intertechnologies	MOSFET, N-CH, 20V, 14A, 150DEG C, 1.5W RoHS: Compliant	50	5000:$0.4620 1000:$0.4860 500:$0.6190 250:$0.6920 100:$0.7600 25:$1.0300 5:$1.1200
SISH108DN-T1-GE3 DISTI # 3019126	Vishay Intertechnologies	MOSFET, N-CH, 20V, 14A, 150DEG C, 1.5W	50	500:£0.2120 250:£0.2490 100:£0.2860 25:£0.3970 5:£0.4260

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Availability

Stock:: Available
On Order:: 1988
Enter Quantity:

Current price of SISH108DN-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$0.71~~; ~~$0.71~~

10: ~~$0.57~~; ~~$5.74~~

100: ~~$0.44~~; ~~$43.50~~

500: ~~$0.36~~; ~~$180.00~~

1000: ~~$0.29~~; ~~$288.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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SISH108DN-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes