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| PartNumber | SISH615ADN-T1-GE3 | SISH625DN-T1-GE3 | SISH617DN-T1-GE3 |
| Description | MOSFET -20V Vds; 12V Vgs PowerPAK 1212-8SH | MOSFET -30V Vds; 20V Vgs PowerPAK 1212-8SH | MOSFET -30V Vds 25V Vgs PowerPAK 1212-8 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK1212-8 | PowerPAK1212-8 | PowerPAK-1212-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 20 V | 30 V | 30 V |
| Id Continuous Drain Current | 35 A | 35 A | 35 A |
| Rds On Drain Source Resistance | 4.4 mOhms | 7 mOhms | 12.3 mOhms |
| Vgs th Gate Source Threshold Voltage | - 1.5 V | - 2.5 V | 2.5 V |
| Vgs Gate Source Voltage | 12 V | 20 V | 25 V |
| Qg Gate Charge | 183 nC | 126 nC | 59 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 52 W | 52 W | 52 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | TrenchFET, PowerPAK | TrenchFET, PowerPAK | TrenchFET, PowerPAK |
| Packaging | Reel | Reel | Reel |
| Series | SIS | SIS | SIS |
| Transistor Type | 1 P-Channel | 1 P-Channel | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 82 S | 47 S | 35 S |
| Fall Time | 26 ns | 10 ns | 9 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 40 ns | 13 ns | 9 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 75 ns | 55 ns | 32 ns |
| Typical Turn On Delay Time | 41 ns | 15 ns | 11 ns |