SISH625DN-T1-GE3

SISH625DN-T1-GE3
Mfr. #:
SISH625DN-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -30V Vds; 20V Vgs PowerPAK 1212-8SH
Lifecycle:
New from this manufacturer.
Datasheet:
SISH625DN-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
SISH625DN-T1-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
PowerPAK1212-8
Number of Channels:
1 Channel
Transistor Polarity:
P-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
35 A
Rds On - Drain-Source Resistance:
7 mOhms
Vgs th - Gate-Source Threshold Voltage:
- 2.5 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
126 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
52 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
TrenchFET, PowerPAK
Packaging:
Reel
Series:
SIS
Transistor Type:
1 P-Channel
Brand:
Vishay / Siliconix
Forward Transconductance - Min:
47 S
Fall Time:
10 ns
Product Type:
MOSFET
Rise Time:
13 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
55 ns
Typical Turn-On Delay Time:
15 ns
Tags
SISH6, SISH, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Part # Mfg. Description Stock Price
SISH625DN-T1-GE3
DISTI # V72:2272_22759345
Vishay IntertechnologiesP-Channel 30 V (D-S) MOSFET PowerPAK 1212-8SH 1G , 7 m @ 10Vm @ 7.5V 11 m @ 4.5V5444
  • 3000:$0.2128
  • 1000:$0.2554
  • 500:$0.3187
  • 250:$0.3527
  • 100:$0.3847
  • 25:$0.4546
  • 10:$0.5556
  • 1:$0.6608
SISH625DN-T1-GE3
DISTI # SISH625DN-T1-GE3CT-ND
Vishay SiliconixMOSFET P-CHAN 30 V POWERPAK 1212
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
4148In Stock
  • 1000:$0.2769
  • 500:$0.3461
  • 100:$0.4378
  • 10:$0.5710
  • 1:$0.6500
SISH625DN-T1-GE3
DISTI # SISH625DN-T1-GE3DKR-ND
Vishay SiliconixMOSFET P-CHAN 30 V POWERPAK 1212
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
4148In Stock
  • 1000:$0.2769
  • 500:$0.3461
  • 100:$0.4378
  • 10:$0.5710
  • 1:$0.6500
SISH625DN-T1-GE3
DISTI # SISH625DN-T1-GE3TR-ND
Vishay SiliconixMOSFET P-CHAN 30 V POWERPAK 1212
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
3000In Stock
  • 30000:$0.2128
  • 15000:$0.2184
  • 6000:$0.2268
  • 3000:$0.2436
SISH625DN-T1-GE3
DISTI # 32638894
Vishay IntertechnologiesP-Channel 30 V (D-S) MOSFET PowerPAK 1212-8SH 1G , 7 m @ 10Vm @ 7.5V 11 m @ 4.5V6000
  • 6000:$0.2487
SISH625DN-T1-GE3
DISTI # 31085725
Vishay IntertechnologiesP-Channel 30 V (D-S) MOSFET PowerPAK 1212-8SH 1G , 7 m @ 10Vm @ 7.5V 11 m @ 4.5V5444
  • 3000:$0.2128
  • 1000:$0.2554
  • 500:$0.3187
  • 250:$0.3527
  • 100:$0.3847
  • 32:$0.4546
SISH625DN-T1-GE3
DISTI # SISH625DN-T1-GE3
Vishay Intertechnologies- Tape and Reel (Alt: SISH625DN-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Reel
Americas - 0
  • 60000:$0.2049
  • 30000:$0.2099
  • 18000:$0.2159
  • 12000:$0.2249
  • 6000:$0.2319
SISH625DN-T1-GE3
DISTI # SISH625DN-T1-GE3
Vishay Intertechnologies(Alt: SISH625DN-T1-GE3)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1000:€0.2679
  • 500:€0.2719
  • 100:€0.2769
  • 50:€0.2879
  • 25:€0.3109
  • 10:€0.3619
  • 1:€0.5309
SISH625DN-T1-GE3
DISTI # 81AC3498
Vishay IntertechnologiesP-CHANNEL 30-V (D-S) MOSFET0
  • 50000:$0.2070
  • 30000:$0.2160
  • 20000:$0.2320
  • 10000:$0.2480
  • 5000:$0.2690
  • 1:$0.2760
SISH625DN-T1-GE3
DISTI # 99AC9586
Vishay IntertechnologiesMOSFET, P-CH, -30V, -35A, 150DEG C, 52W,Transistor Polarity:P Channel,Continuous Drain Current Id:-35A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.0056ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-2.5V,RoHS Compliant: Yes50
  • 1000:$0.2590
  • 500:$0.3230
  • 250:$0.3580
  • 100:$0.3920
  • 50:$0.4330
  • 25:$0.4750
  • 10:$0.5160
  • 1:$0.6460
SISH625DN-T1-GE3
DISTI # 78-SISH625DN-T1-GE3
Vishay IntertechnologiesMOSFET -30V Vds,20V Vgs PowerPAK 1212-8SH
RoHS: Compliant
5756
  • 1:$0.6300
  • 10:$0.5100
  • 100:$0.3870
  • 500:$0.3200
  • 1000:$0.2560
  • 3000:$0.2310
  • 6000:$0.2160
  • 9000:$0.2080
  • 24000:$0.2000
SISH625DN-T1-GE3
DISTI # 3019136
Vishay IntertechnologiesMOSFET, P-CH, -30V, -35A, 150DEG C, 52W45
  • 500:£0.2320
  • 250:£0.2570
  • 100:£0.2810
  • 10:£0.4110
  • 1:£0.5310
SISH625DN-T1-GE3
DISTI # 3019136
Vishay IntertechnologiesMOSFET, P-CH, -30V, -35A, 150DEG C, 52W
RoHS: Compliant
45
  • 1000:$0.3620
  • 500:$0.4580
  • 250:$0.5100
  • 100:$0.5630
  • 25:$0.7570
  • 5:$0.8290
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ATECC608A-SSHDA-T

Mfr.#: ATECC608A-SSHDA-T

OMO.#: OMO-ATECC608A-SSHDA-T

Security ICs / Authentication ICs ECC/ECDSA/ECDHE I2C SOIC T/R
SP1326-01LTG

Mfr.#: SP1326-01LTG

OMO.#: OMO-SP1326-01LTG

TVS Diodes / ESD Suppressors 15pF 30kV SOD-523 BI-DIR DIS TVS DIODE
ATTINY3217-MFR

Mfr.#: ATTINY3217-MFR

OMO.#: OMO-ATTINY3217-MFR

8-bit Microcontrollers - MCU 20MHz, 32KB, QFN24, Ind 125C, Green, T&R
BMD-340-A-R

Mfr.#: BMD-340-A-R

OMO.#: OMO-BMD-340-A-R

Bluetooth Modules (802.15.1) BMD-340-A-R with nRF52840 processor
ATTINY3217-MFR

Mfr.#: ATTINY3217-MFR

OMO.#: OMO-ATTINY3217-MFR-MICROCHIP-TECHNOLOGY

20MHz, 32KB, QFN24, Ind 125C, Green, T&R
BMD-340-A-R

Mfr.#: BMD-340-A-R

OMO.#: OMO-BMD-340-A-R-RIGADO

BLUETOOTH LOW ENERGY 5.0 MODULE
ATECC608A-SSHDA-T

Mfr.#: ATECC608A-SSHDA-T

OMO.#: OMO-ATECC608A-SSHDA-T-MICROCHIP-TECHNOLOGY

IC AUTHENTICATION CHIP 8SOIC
SP1326-01LTG

Mfr.#: SP1326-01LTG

OMO.#: OMO-SP1326-01LTG-LITTELFUSE

1Ch 30KV 5V bidir TVS Diode Array SOD523
FCSL20R005FER

Mfr.#: FCSL20R005FER

OMO.#: OMO-FCSL20R005FER-OHMITE

Resistors FCSL Series Metal Foil Power Rating 1W Tape Reel Resistance 5 mOhms
RC0603JR-070RL

Mfr.#: RC0603JR-070RL

OMO.#: OMO-RC0603JR-070RL-YAGEO

Thick Film Resistors - SMD ZERO OHM JUMPER
Availability
Stock:
Available
On Order:
1988
Enter Quantity:
Current price of SISH625DN-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$0.63
$0.63
10
$0.51
$5.10
100
$0.39
$38.70
500
$0.32
$160.00
1000
$0.26
$256.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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