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| PartNumber | SISS64DN-T1-GE3 | SISS60DN-T1-GE3 | SISS61DN-T1-GE3 |
| Description | MOSFET 30V Vds 20V Vgs PowerPAK 1212-8S | MOSFET N-Channel 30 V (D-S) MOSFET with Schottky Diode | MOSFET Pch 20V Vds 8V Vgs PowerPAK 1212-8S |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | E | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-1212-8 | PowerPAK-1212-8 | SiSS61DN-T1-GE3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - 20 V |
| Id Continuous Drain Current | 40 A | 181.8 A | - 111.9 A |
| Rds On Drain Source Resistance | 1.8 mOhms | 1.31 mOhms | 2.9 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.1 V | 1 V | - 0.9 V |
| Vgs Gate Source Voltage | 20 V, - 16 V | - 12 V, 16 V | 8 V |
| Qg Gate Charge | 68 nC | 57 nC | 154 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 57 W | 65.8 W | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | TrenchFET, PowerPAK | PowerPAK | - |
| Packaging | Reel | Reel | Reel |
| Series | SIS | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 70 S | 84 S | - |
| Fall Time | 10 ns | 6 ns | 15 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 15 ns | 7 ns | 10 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 25 ns | 30 ns | 90 ns |
| Typical Turn On Delay Time | 13 ns | 18 ns | 15 ns |