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SISS61DN-T1-GE3

SISS61DN-T1-GE3
Mfr. #:
SISS61DN-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET Pch 20V Vds 8V Vgs PowerPAK 1212-8S
Lifecycle:
New from this manufacturer.
Datasheet:
SISS61DN-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
SISS61DN-T1-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
SiSS61DN-T1-GE3
Number of Channels:
1 Channel
Transistor Polarity:
P-Channel
Vds - Drain-Source Breakdown Voltage:
- 20 V
Id - Continuous Drain Current:
- 111.9 A
Rds On - Drain-Source Resistance:
2.9 mOhms
Vgs th - Gate-Source Threshold Voltage:
- 0.9 V
Vgs - Gate-Source Voltage:
8 V
Qg - Gate Charge:
154 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Reel
Brand:
Vishay / Siliconix
Fall Time:
15 ns
Product Type:
MOSFET
Rise Time:
10 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
90 ns
Typical Turn-On Delay Time:
15 ns
Tags
SISS6, SISS, SIS
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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Part # Mfg. Description Stock Price
SISS61DN-T1-GE3
DISTI # SISS61DN-T1-GE3CT-ND		Vishay SiliconixMOSFET P-CH 20V PPAK 1212-8S
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		45In Stock
  • 1000:$0.4648
  • 500:$0.5887
  • 100:$0.7127
  • 10:$0.9140
  • 1:$1.0200
SISS61DN-T1-GE3
DISTI # SISS61DN-T1-GE3DKR-ND		Vishay SiliconixMOSFET P-CH 20V PPAK 1212-8S
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		45In Stock
  • 1000:$0.4648
  • 500:$0.5887
  • 100:$0.7127
  • 10:$0.9140
  • 1:$1.0200
SISS61DN-T1-GE3
DISTI # SISS61DN-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CH 20V PPAK 1212-8S
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 15000:$0.3851
  • 6000:$0.4001
  • 3000:$0.4212
SISS61DN-T1-GE3
DISTI # SISS61DN-T1-GE3		Vishay IntertechnologiesTransistor MOSFET P-CH 20V 111.9A 8-Pin PowerPAK 1212-S T/R (Alt: SISS61DN-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 30000:€0.3839
  • 18000:€0.4009
  • 12000:€0.4539
  • 6000:€0.5599
  • 3000:€0.7809
SISS61DN-T1-GE3
DISTI # 02AH2522		Vishay IntertechnologiesMOSFET, P-CH, -20V, -111.9A, 150DEG C,Transistor Polarity:P Channel,Continuous Drain Current Id:-111.9A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.0029ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-900mV,RoHS Compliant: Yes50
  • 500:$0.5500
  • 250:$0.5950
  • 100:$0.6400
  • 50:$0.7050
  • 25:$0.7700
  • 10:$0.8340
  • 1:$1.0100
SISS61DN-T1-GE3
DISTI # 78-SISS61DN-T1-GE3		Vishay IntertechnologiesMOSFET Pch 20V Vds 8V Vgs PowerPAK 1212-8S
RoHS: Compliant		0
  • 1:$1.0000
  • 10:$0.8260
  • 100:$0.6340
  • 500:$0.5450
  • 1000:$0.4300
  • 3000:$0.4020
  • 6000:$0.3820
  • 9000:$0.3670
SISS61DN-T1-GE3Vishay IntertechnologiesMOSFET Pch 20V Vds 8V Vgs PowerPAK 1212-8SAmericas -
    SISS61DN-T1-GE3
    DISTI # 3050577    		Vishay IntertechnologiesMOSFET, P-CH, -20V, -111.9A, 150DEG C
    RoHS: Compliant    		50
    • 1000:$0.5310
    • 500:$0.6060
    • 250:$0.6850
    • 100:$0.7330
    • 10:$0.9090
    • 1:$1.0600
    SISS61DN-T1-GE3
    DISTI # 3050577    		Vishay IntertechnologiesMOSFET, P-CH, -20V, -111.9A, 150DEG C50
    • 500:£0.4110
    • 250:£0.4560
    • 100:£0.5000
    • 10:£0.7190
    • 1:£0.9210
    Image Part # Description
    FDMC510P-F106

    Mfr.#: FDMC510P-F106

    OMO.#: OMO-FDMC510P-F106

    		 MOSFET ST3 20V/8V PCH Power Trench Mosfet
    FDMC6686P

    Mfr.#: FDMC6686P

    OMO.#: OMO-FDMC6686P-ON-SEMICONDUCTOR

    		 IGBT Transistors MOSFET PT8P 20/8V power PQFN33 with cu wire
    FDMC510P-F106

    Mfr.#: FDMC510P-F106

    OMO.#: OMO-FDMC510P-F106-ON-SEMICONDUCTOR

    		 ST3 20V/8V PCH ERTREN
    Availability
    Stock:
    Available
    On Order:
    1989
    Enter Quantity:
    Current price of SISS61DN-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $1.00
    $1.00
    10
    $0.83
    $8.26
    100
    $0.63
    $63.40
    500
    $0.54
    $272.50
    1000
    $0.43
    $430.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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