SiZ328DT-T1-GE3 vs SIZ322DT-T1-GE3 vs SIZ320DT-T1-GE3

 
PartNumberSiZ328DT-T1-GE3SIZ322DT-T1-GE3SIZ320DT-T1-GE3
DescriptionMOSFET 25V Vds 16V Vgs PowerPAIR 3 x 3MOSFET 25V Vds 16V Vgs PowerPAIR 3 x 3MOSFET 25V Vds 16V Vgs PowerPAIR 3 x 3
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePowerPAIR-3x3-8PowerPAIR-3x3-8PowerPAIR-3x3-8
Number of Channels2 Channel2 Channel2 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage25 V25 V25 V
Id Continuous Drain Current25.3 A, 30 A30 A30 A, 40 A
Rds On Drain Source Resistance10 mOhms, 15 mOhms5.29 mOhms, 5.29 mOhms4.24 mOhms, 8.3 mOhms
Vgs th Gate Source Threshold Voltage1.1 V1 V2.4 V
Vgs Gate Source Voltage- 12 V, 16 V- 12 V, 16 V- 12 V, 16 V
Qg Gate Charge6.9 nC, 11.3 nC20.1 nC, 20.1 nC9.5 nC, 17.8 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation16.2 W16.7 W16.7 W, 31 W
ConfigurationDualDualDual
Channel ModeEnhancementEnhancementEnhancement
TradenameTrenchFET, PowerPAIRTrenchFET, PowerPAIRTrenchFET
PackagingReelReelReel
SeriesSIZSIZSIZ
Transistor Type2 N-Channel2 N-Channel2 N-Channel
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Forward Transconductance Min25 S, 42 S57 S45 S, 68 S
Fall Time5 ns, 5 ns15 ns, 15 ns10 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time5 ns, 11 ns25 ns, 25 ns28 ns, 45 ns
Factory Pack Quantity300030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time12 ns, 15 ns15 ns, 15 ns15 ns, 20 ns
Typical Turn On Delay Time7 ns, 8 ns10 ns, 10 ns8 ns, 12 ns
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