SIZ322DT-T1-GE3

Mfr. #:: SIZ322DT-T1-GE3
Manufacturer:: Vishay / Siliconix
Description:: MOSFET 25V Vds 16V Vgs PowerPAIR 3 x 3
Lifecycle:: New from this manufacturer.
Datasheet:: SIZ322DT-T1-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: SIZ322DT-T1-GE3 more Information

Product Attribute
Attribute Value

Manufacturer:: Vishay

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: PowerPAIR-3x3-8

Number of Channels:: 2 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 25 V

Id - Continuous Drain Current:: 30 A

Rds On - Drain-Source Resistance:: 5.29 mOhms, 5.29 mOhms

Vgs th - Gate-Source Threshold Voltage:: 1 V

Vgs - Gate-Source Voltage:: - 12 V, 16 V

Qg - Gate Charge:: 20.1 nC, 20.1 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 16.7 W

Configuration:: Dual

Channel Mode:: Enhancement

Tradename:: TrenchFET, PowerPAIR

Packaging:: Reel

Series:: SIZ

Transistor Type:: 2 N-Channel

Brand:: Vishay / Siliconix

Forward Transconductance - Min:: 57 S

Fall Time:: 15 ns, 15 ns

Product Type:: MOSFET

Rise Time:: 25 ns, 25 ns

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 15 ns, 15 ns

Typical Turn-On Delay Time:: 10 ns, 10 ns

Tags: SiZ32, SiZ3, SiZ

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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SIZ322DT-T1-GE3 Description

***et: TrenchFET Gen IV Power MOSFET N-Channel Dual 25V VDS +16V -12V VGS 30A ID 8-Pin PowerPAIR T/R

***ure Electronics: TrenchFET Gen IV Power MOSFET N-Channel Dual 25V VDS +16V -12V VGS 30A ID 8-Pin

***ical: Trans MOSFET N-CH 25V 19A 8-Pin PowerPAIR EP T/R

***i-Key: MOSFET 2 N-CH 25V 30A 8-POWER33

***ark: Mosfet, Dual N-Ch, 25V, 30A, Powerpair; Transistor Polarity:dual N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:25V; On Resistance Rds(On):0.00529Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.4V; Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, DUAL N-CH, 25V, 30A, POWERPAIR; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.00529ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.4V; Power Dissipation Pd:16.7W; Transistor Case Style:PowerPAIR; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, DOPPIO CA-N 25V, 30A, POWERPAIR; Polarità Transistor:Canale N Doppio; Corrente Continua di Drain Id:30A; Tensione Drain Source Vds:25V; Resistenza di Attivazione Rds(on):0.00529ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.4V; Dissipazione di Potenza Pd:16.7W; Modello Case Transistor:PowerPAIR; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Gen IV Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

SIZ322DT-T1-GE3 More Information

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

PowerPAIR® Dual-MOSFETs: Vishay PowerPAIR® Dual-MOSFETs combine optimized combinations of MOSFETs in one compact package. The co-packaged PowerPAIR Dual-MOSFETs use less space and offer increased performance over separate discretes. By having the two MOSFETs already connected inside the PowerPAIR package, layouts are made easier and parasitic inductance from PCB traces are reduced, increasing efficiency.

Market price

Part #	Mfg.	Description	Stock	Price
SIZ322DT-T1-GE3 DISTI # V72:2272_21388879	Vishay Intertechnologies	SIZ322DT-T1-GE3	5470	75000:$0.3145 30000:$0.3200 15000:$0.3255 6000:$0.3310 3000:$0.3365 1000:$0.3604 500:$0.4357 250:$0.5536 100:$0.5578 50:$0.5946 25:$0.6606 10:$0.8075 1:$0.9991
SIZ322DT-T1-GE3 DISTI # V99:2348_21388879	Vishay Intertechnologies	SIZ322DT-T1-GE3	0	6000000:$0.3404 3000000:$0.3405 600000:$0.3455 60000:$0.3524 6000:$0.3535
SIZ322DT-T1-GE3 DISTI # SIZ322DT-T1-GE3CT-ND	Vishay Siliconix	MOSFET 2 N-CH 25V 30A 8-POWER33 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2847In Stock	1000:$0.4018 500:$0.5023 100:$0.6354 10:$0.8290 1:$0.9400
SIZ322DT-T1-GE3 DISTI # SIZ322DT-T1-GE3DKR-ND	Vishay Siliconix	MOSFET 2 N-CH 25V 30A 8-POWER33 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2847In Stock	1000:$0.4018 500:$0.5023 100:$0.6354 10:$0.8290 1:$0.9400
SIZ322DT-T1-GE3 DISTI # SIZ322DT-T1-GE3TR-ND	Vishay Siliconix	MOSFET 2 N-CH 25V 30A 8-POWER33 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	30000:$0.3088 15000:$0.3170 6000:$0.3291 3000:$0.3535
SIZ322DT-T1-GE3 DISTI # 30272541	Vishay Intertechnologies	SIZ322DT-T1-GE3	5470	20:$0.9991
SIZ322DT-T1-GE3 DISTI # SIZ322DT-T1-GE3	Vishay Intertechnologies	TrenchFET Gen IV Power MOSFET N-Channel Dual 25V VDS +16V -12V VGS 30A ID8-Pin PowerPAIR T/R - Tape and Reel (Alt: SIZ322DT-T1-GE3) RoHS: Compliant Min Qty: 6000 Container: Reel	Americas - 0	60000:$0.2969 30000:$0.3049 18000:$0.3139 12000:$0.3269 6000:$0.3369
SIZ322DT-T1-GE3 DISTI # 59AC7469	Vishay Intertechnologies	DUAL N-CHANNEL 25-V (D-S) MOSFET	0	50000:$0.3000 30000:$0.3140 20000:$0.3370 10000:$0.3600 5000:$0.3900 1:$0.4000
SIZ322DT-T1-GE3 DISTI # 81AC2803	Vishay Intertechnologies	MOSFET, DUAL N-CH, 25V, 30A, POWERPAIR,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.00529ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.4V,RoHS Compliant: Yes	5	1000:$0.3760 500:$0.4700 250:$0.5190 100:$0.5680 50:$0.6280 25:$0.6880 10:$0.7480 1:$0.9290
SIZ322DT-T1-GE3 DISTI # 78-SIZ322DT-T1-GE3	Vishay Intertechnologies	MOSFET 25V Vds 16V Vgs PowerPAIR 3 x 3 RoHS: Compliant	7145	1:$0.9200 10:$0.7410 100:$0.5620 500:$0.4650 1000:$0.3720 3000:$0.3370
SIZ322DT-T1-GE3 DISTI # 2932983	Vishay Intertechnologies	MOSFET, DUAL N-CH, 25V, 30A, POWERPAIR	5	500:£0.3370 250:£0.3730 100:£0.4080 10:£0.5870 1:£0.7620
SIZ322DT-T1-GE3 DISTI # 2932983	Vishay Intertechnologies	MOSFET, DUAL N-CH, 25V, 30A, POWERPAIR RoHS: Compliant	5	1000:$0.5170 500:$0.5470 250:$0.6440 100:$0.7830 10:$0.9990 1:$1.2100

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Availability

Stock:: Available
On Order:: 1990
Enter Quantity:

Current price of SIZ322DT-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$0.92~~; ~~$0.92~~

10: ~~$0.74~~; ~~$7.41~~

100: ~~$0.56~~; ~~$56.20~~

500: ~~$0.46~~; ~~$232.50~~

1000: ~~$0.37~~; ~~$372.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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Step3:Packaging Boxes

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Step2:
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